DOI: 10.1063/1.1604190. Current rectification in a single GaN nanowire with a well-defined <i>p

Current rectification in a single GaN nanowire with a well-defined p–n junction

10.1063/1.1604190

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

This letter discusses Mg incorporation in GaN nanowires with diameters ∼35 nm, fabricated by vapor–liquid–solid synthesis in p-type nanowires. Turning on the Mg doping halfway through the synthesis produced nanowires with p–n junctions that showed excellent rectification properties down to 2.6 K. The nanowires are shown to possess good-quality, crystalline, hexagonal GaN inner cores surrounded by an amorphous GaN outer layer. Most wires grow such that the crystalline c axis is normal to the long axis of the nanowire. The temperature dependence of the current–voltage characteristics is consistent with electron tunneling through a voltage-dependent barrier.

Bibliography

Cheng, G., Kolmakov, A., Zhang, Y., Moskovits, M., Munden, R., Reed, M. A., Wang, G., Moses, D., & Zhang, J. (2003). Current rectification in a single GaN nanowire with a well-defined pân junction. Applied Physics Letters, 83(8), 1578â1580.

Authors 9

Guosheng Cheng (first)
Andrei Kolmakov (additional)
Youxiang Zhang (additional)
Martin Moskovits (additional)
Ryan Munden (additional)
Mark A. Reed (additional)
Guangming Wang (additional)
Daniel Moses (additional)
Jinping Zhang (additional)

References 14 Referenced 88

10.1126/science.1069197 / Science (2002)
10.1126/science.1066171 / Science (2001)
10.1126/science.1066192 / Science (2001)
10.1038/417052a / Nature (London) (2002)
10.1126/science.1061738 / Science (2001)
10.1126/science.288.5465.494 / Science (2000)
10.1038/35051047 / Nature (London) (2001)
10.1021/nl034003w / Nano Lett. (2003)
10.1021/nl015667d / Nano Lett. (2002)
10.1038/415617a / Nature (London) (2002)
10.1002/(SICI)1521-4095(199801)10:2<138::AID-ADMA138>3.0.CO;2-A / Adv. Mater. (Weinheim, Ger.) (1998)
10.1002/1521-4095(200104)13:8<591::AID-ADMA591>3.0.CO;2-# / Adv. Mater. (Weinheim, Ger.) (2001)
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Dates

Type	When
Created	22 years ago (Aug. 21, 2003, 6:36 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:16 p.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 5:21 p.m.)
Issued	21 years, 11 months ago (Aug. 25, 2003)
Published	21 years, 11 months ago (Aug. 25, 2003)
Published Print	21 years, 11 months ago (Aug. 25, 2003)

Funders 0

None

BibTeX

@article{Cheng_2003, title={Current rectification in a single GaN nanowire with a well-defined p–n junction}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1604190}, DOI={10.1063/1.1604190}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cheng, Guosheng and Kolmakov, Andrei and Zhang, Youxiang and Moskovits, Martin and Munden, Ryan and Reed, Mark A. and Wang, Guangming and Moses, Daniel and Zhang, Jinping}, year={2003}, month=aug, pages={1578–1580} }

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