Abstract
The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 μm. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semiclassical electron trajectories show good agreement with the experiment.
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Dates
Type | When |
---|---|
Created | 22 years ago (Aug. 14, 2003, 6:32 p.m.) |
Deposited | 2 years, 1 month ago (July 12, 2023, 6:27 a.m.) |
Indexed | 3 months, 2 weeks ago (May 16, 2025, 11:05 a.m.) |
Issued | 22 years ago (Aug. 12, 2003) |
Published | 22 years ago (Aug. 12, 2003) |
Published Online | 22 years ago (Aug. 12, 2003) |
Published Print | 22 years ago (Aug. 18, 2003) |
@article{Daumer_2003, title={Quasiballistic transport in HgTe quantum-well nanostructures}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1602170}, DOI={10.1063/1.1602170}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Daumer, V. and Golombek, I. and Gbordzoe, M. and Novik, E. G. and Hock, V. and Becker, C. R. and Buhmann, H. and Molenkamp, L. W.}, year={2003}, month=aug, pages={1376–1378} }