DOI: 10.1063/1.1600848. Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition

Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition

10.1063/1.1600848

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We demonstrate the operation of an organic switching device using a uniform poly-crystalline Cu:7, 7, 8, 8-Tetracyanoquinodimethane (TCNQ) charge transfer (CT)-complex thin film that is prepared by vacuum vapor codeposition. Characteristic CT-absorption at λ=600–1200 nm was observed in the complex film in the UV-visible spectrum and the cyano stretching peak in the IR spectrum shifted to a higher (more than 29 cm−1) wave number than that of a pristine TCNQ film, suggesting the formation of a CT-complex in the evaporated thin film. Reproducible electrical switching characteristics were observed in the indium tin oxide/Al/(Al2O3)/Cu:TCNQ/Al structure. The device exhibited a clear threshold from low impedance to high impedance at an applied voltage of 10.0±2.0 V and a reverse phenomenon at a negative bias of −9.5±2.0 V. In this study, we demonstrate that a thin Al2O3 layer between the aluminum (Al) anode and Cu:TCNQ layers creates reproducible switching.

Bibliography

Oyamada, T., Tanaka, H., Matsushige, K., Sasabe, H., & Adachi, C. (2003). Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition. Applied Physics Letters, 83(6), 1252â1254.

Authors 5

Takahito Oyamada (first)
Haruo Tanaka (additional)
Kazumi Matsushige (additional)
Hiroyuki Sasabe (additional)
Chihaya Adachi (additional)

References 13 Referenced 193

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{'key': '2024020401084428700_r2'}
{'key': '2024020401084428700_r3'}
10.1063/1.90814 / Appl. Phys. Lett. (1979)
{'key': '2024020401084428700_r5', 'first-page': '219', 'volume': '17', 'year': '1981', 'journal-title': 'Chem. Scr.'} / Chem. Scr. (1981)
{'key': '2024020401084428700_r6', 'first-page': '405', 'volume': '34', 'year': '1982', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1982)
10.1016/0379-6779(82)90007-8 / Synth. Met. (1982)
10.1063/1.102078 / Appl. Phys. Lett. (1989)
10.1016/0379-6779(96)80111-1 / Synth. Met. (1996)
{'key': '2024020401084428700_r10', 'first-page': '12', 'volume': '68', 'year': '1990', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1990)
10.1063/1.1436274 / Appl. Phys. Lett. (2002)
10.1063/1.1556555 / Appl. Phys. Lett. (2003)
10.1063/1.1528738 / Appl. Phys. Lett. (2002)

Dates

Type	When
Created	22 years ago (Aug. 8, 2003, 9:47 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:08 p.m.)
Indexed	4 months, 3 weeks ago (April 1, 2025, 3:44 a.m.)
Issued	22 years ago (Aug. 11, 2003)
Published	22 years ago (Aug. 11, 2003)
Published Print	22 years ago (Aug. 11, 2003)

Funders 0

None

BibTeX

@article{Oyamada_2003, title={Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1600848}, DOI={10.1063/1.1600848}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Oyamada, Takahito and Tanaka, Haruo and Matsushige, Kazumi and Sasabe, Hiroyuki and Adachi, Chihaya}, year={2003}, month=aug, pages={1252–1254} }

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