DOI: 10.1063/1.1598272. One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm)

One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm)

10.1063/1.1598272

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A one-dimensional heat conduction model is developed for a phase change random access memory device with an 8F2 memory cell structure (F=0.15 μm). The required current level for a reset operation, which corresponds to the phase switching from a crystalline (“1” state) to an amorphous phase (“0” state) of Ge2Sb2Te5, was investigated by calculating one-dimensional temperature profiles for the memory cell structure. It is revealed that a reset operation is not achieved at the current level (2 mA) reported for existing devices with a subquarter micron plug size when only TiN is used as a resistive heater. However, it is possible when an additional heating layer of 5 nm thickness is inserted between the TiN and Ge2Sb2Te5 layers, for which the electrical resistivity ρelec is higher than 105 μΩ cm, and the thermal conductivity κ and specific heat c are as low as those of Ge2Sb2Te5. In addition, it is shown that a reset operation at a low current level of 1 mA can be realized in this memory cell when amorphous carbon (κ=0.2 W/m K and ρelec=106 μΩ cm) is used as an additional heating layer. It is believed that this relatively simple one-dimensional heat conduction model is a useful tool for analyzing the device operation of phase change random access memory devices and for selecting the proper conditions for an additional heating layer allowing for low-current operation.

Bibliography

Kang, D.-H., Ahn, D.-H., Kim, K.-B., Webb, J. F., & Yi, K.-W. (2003). One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15âÎ¼m). Journal of Applied Physics, 94(5), 3536â3542.

Authors 5

Dae-Hwan Kang (first)
Dong-Ho Ahn (additional)
Ki-Bum Kim (additional)
J. F. Webb (additional)
Kyung-Woo Yi (additional)

References 20 Referenced 130

{'key': '2024020717444117300_r1'}
{'key': '2024020717444117300_r2'}
{'key': '2024020717444117300_r3'}
{'key': '2024020717444117300_r4'}
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{'key': '2024020717444117300_r6'}
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{'key': '2024020717444117300_r9'}
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Dates

Type	When
Created	22 years ago (Aug. 21, 2003, 6:36 p.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 6:34 p.m.)
Indexed	2 days, 6 hours ago (Aug. 21, 2025, 2:15 p.m.)
Issued	21 years, 11 months ago (Sept. 1, 2003)
Published	21 years, 11 months ago (Sept. 1, 2003)
Published Print	21 years, 11 months ago (Sept. 1, 2003)

Funders 0

None

BibTeX

@article{Kang_2003, title={One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm)}, volume={94}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1598272}, DOI={10.1063/1.1598272}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kang, Dae-Hwan and Ahn, Dong-Ho and Kim, Ki-Bum and Webb, J. F. and Yi, Kyung-Woo}, year={2003}, month=sep, pages={3536–3542} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        21
      ]
    ],
    "date-time": "2025-08-21T18:15:03Z",
    "timestamp": 1755800103501
  },
  "reference-count": 20,
  "publisher": "AIP Publishing",
  "issue": "5",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2003,
        9,
        1
      ]
    ]
  },
  "abstract": "<jats:p>A one-dimensional heat conduction model is developed for a phase change random access memory device with an 8F2 memory cell structure (F=0.15\u2009\u03bcm). The required current level for a reset operation, which corresponds to the phase switching from a crystalline (\u201c1\u201d state) to an amorphous phase (\u201c0\u201d state) of Ge2Sb2Te5, was investigated by calculating one-dimensional temperature profiles for the memory cell structure. It is revealed that a reset operation is not achieved at the current level (2 mA) reported for existing devices with a subquarter micron plug size when only TiN is used as a resistive heater. However, it is possible when an additional heating layer of 5 nm thickness is inserted between the TiN and Ge2Sb2Te5 layers, for which the electrical resistivity \u03c1elec is higher than 105\u2009\u03bc\u03a9\u200acm, and the thermal conductivity \u03ba and specific heat c are as low as those of Ge2Sb2Te5. In addition, it is shown that a reset operation at a low current level of 1 mA can be realized in this memory cell when amorphous carbon (\u03ba=0.2\u2009W/m\u200aK and \u03c1elec=106\u2009\u03bc\u03a9\u200acm) is used as an additional heating layer. It is believed that this relatively simple one-dimensional heat conduction model is a useful tool for analyzing the device operation of phase change random access memory devices and for selecting the proper conditions for an additional heating layer allowing for low-current operation.</jats:p>",
  "DOI": "10.1063/1.1598272",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        8,
        21
      ]
    ],
    "date-time": "2003-08-21T22:36:27Z",
    "timestamp": 1061505387000
  },
  "page": "3536-3542",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 130,
  "title": "One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15\u2009\u03bcm)",
  "prefix": "10.1063",
  "volume": "94",
  "author": [
    {
      "given": "Dae-Hwan",
      "family": "Kang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Research Institute of Advanced Materials, Seoul National University, School of Material Science and Engineering, San 56-1, Shillim-dong, Kwanak-ku Seoul 151-742, Korea"
        }
      ]
    },
    {
      "given": "Dong-Ho",
      "family": "Ahn",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Research Institute of Advanced Materials, Seoul National University, School of Material Science and Engineering, San 56-1, Shillim-dong, Kwanak-ku Seoul 151-742, Korea"
        }
      ]
    },
    {
      "given": "Ki-Bum",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Research Institute of Advanced Materials, Seoul National University, School of Material Science and Engineering, San 56-1, Shillim-dong, Kwanak-ku Seoul 151-742, Korea"
        }
      ]
    },
    {
      "given": "J. F.",
      "family": "Webb",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Research Institute of Advanced Materials, Seoul National University, School of Material Science and Engineering, San 56-1, Shillim-dong, Kwanak-ku Seoul 151-742, Korea"
        }
      ]
    },
    {
      "given": "Kyung-Woo",
      "family": "Yi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Research Institute of Advanced Materials, Seoul National University, School of Material Science and Engineering, San 56-1, Shillim-dong, Kwanak-ku Seoul 151-742, Korea"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020717444117300_r1"
    },
    {
      "key": "2024020717444117300_r2"
    },
    {
      "key": "2024020717444117300_r3"
    },
    {
      "key": "2024020717444117300_r4"
    },
    {
      "key": "2024020717444117300_r5",
      "doi-asserted-by": "crossref",
      "first-page": "2528",
      "DOI": "10.1109/23.903803",
      "volume": "47",
      "year": "2000",
      "journal-title": "IEEE Trans. Nucl. Sci."
    },
    {
      "key": "2024020717444117300_r6"
    },
    {
      "key": "2024020717444117300_r7"
    },
    {
      "key": "2024020717444117300_r8"
    },
    {
      "key": "2024020717444117300_r9"
    },
    {
      "key": "2024020717444117300_r10"
    },
    {
      "key": "2024020717444117300_r11",
      "first-page": "421",
      "volume": "37",
      "year": "2001",
      "journal-title": "Inorg. Mater. (Transl. of Neorg. Mater.)"
    },
    {
      "key": "2024020717444117300_r12",
      "doi-asserted-by": "crossref",
      "first-page": "230",
      "DOI": "10.1116/1.1430249",
      "volume": "20",
      "year": "2002",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020717444117300_r13",
      "doi-asserted-by": "crossref",
      "first-page": "5674",
      "DOI": "10.1063/1.363620",
      "volume": "80",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020717444117300_r14",
      "doi-asserted-by": "crossref",
      "first-page": "1287",
      "DOI": "10.1116/1.586931",
      "volume": "11",
      "year": "1993",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020717444117300_r15",
      "doi-asserted-by": "crossref",
      "first-page": "240",
      "DOI": "10.1063/1.108977",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020717444117300_r16",
      "doi-asserted-by": "crossref",
      "first-page": "6317",
      "DOI": "10.1063/1.1314301",
      "volume": "88",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020717444117300_r17",
      "doi-asserted-by": "crossref",
      "first-page": "1509",
      "DOI": "10.1016/S0925-9635(96)00575-4",
      "volume": "5",
      "year": "1996",
      "journal-title": "Diamond Relat. Mater."
    },
    {
      "key": "2024020717444117300_r18",
      "doi-asserted-by": "crossref",
      "first-page": "1481",
      "DOI": "10.1116/1.1488946",
      "volume": "20",
      "year": "2002",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020717444117300_r19",
      "doi-asserted-by": "crossref",
      "first-page": "123",
      "DOI": "10.1016/S0169-4332(01)00774-7",
      "volume": "185",
      "year": "2001",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2024020717444117300_r20",
      "doi-asserted-by": "crossref",
      "first-page": "6697",
      "DOI": "10.1063/1.367862",
      "volume": "83",
      "year": "1998",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/94/5/3536/18706175/3536_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/94/5/3536/18706175/3536_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        7
      ]
    ],
    "date-time": "2024-02-07T23:34:48Z",
    "timestamp": 1707348888000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/94/5/3536/482582/One-dimensional-heat-conduction-model-for-an"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2003,
        9,
        1
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "5",
    "published-print": {
      "date-parts": [
        [
          2003,
          9,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1598272",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2003,
        9,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2003,
        9,
        1
      ]
    ]
  }
}