DOI: 10.1063/1.1596733. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

10.1063/1.1596733

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1−xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast relative to GaN is around 7% for wavelengths ranging from 950 to 450 nm. We demonstrate the growth of a crack-free, 20 pairs Al0.84In0.16N/GaN distributed Bragg reflector centered at 515 nm with an over 90% reflectivity and a 35 nm stop band. The growth of high quality AlInN lattice matched to GaN may represent a breakthrough in GaN-based optoelectronics which is presently limited by the lack of a high-index-contrast and high-band gap lattice-matched material.

Bibliography

Carlin, J.-F., & Ilegems, M. (2003). High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN. Applied Physics Letters, 83(4), 668â670.

Authors 2

J.-F. Carlin (first)
M. Ilegems (additional)

References 15 Referenced 243

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Dates

Type	When
Created	22 years, 1 month ago (July 24, 2003, 6:30 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8 p.m.)
Indexed	3 months, 1 week ago (May 27, 2025, 3:47 a.m.)
Issued	22 years, 1 month ago (July 28, 2003)
Published	22 years, 1 month ago (July 28, 2003)
Published Print	22 years, 1 month ago (July 28, 2003)

Funders 0

None

BibTeX

@article{Carlin_2003, title={High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1596733}, DOI={10.1063/1.1596733}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Carlin, J.-F. and Ilegems, M.}, year={2003}, month=jul, pages={668–670} }

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