DOI: 10.1063/1.1595714. High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems

High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems

10.1063/1.1595714

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

High-resolution x-ray photoelectron spectroscopy (XPS) at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8. The method has been applied to analysis of high-k HfO2/interlayer/Si complementary metal–oxide–semiconductor gate-dielectric structures. With the high energy resolution and high throughput of our system, chemical-state differences were observed in the Si 1s, Hf 3d, and O 1s peaks for as-deposited and annealed samples. The results revealed that a SiOxNy interlayer is more effective in controlling the interface structure than SiO2. Our results show the wide applicability of high resolution XPS with hard x rays from a synchrotron source.

Bibliography

Kobayashi, K., Yabashi, M., Takata, Y., Tokushima, T., Shin, S., Tamasaku, K., Miwa, D., Ishikawa, T., Nohira, H., Hattori, T., Sugita, Y., Nakatsuka, O., Sakai, A., & Zaima, S. (2003). High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems. Applied Physics Letters, 83(5), 1005â1007.

Authors 14

K. Kobayashi (first)
M. Yabashi (additional)
Y. Takata (additional)
T. Tokushima (additional)
S. Shin (additional)
K. Tamasaku (additional)
D. Miwa (additional)
T. Ishikawa (additional)
H. Nohira (additional)
T. Hattori (additional)
Y. Sugita (additional)
O. Nakatsuka (additional)
A. Sakai (additional)
S. Zaima (additional)

References 11 Referenced 340

{'key': '2024020401045207900_r1'}
10.1016/0092-640X(85)90016-6 / At. Data Nucl. Data Tables (1985)
10.1063/1.1145784 / Rev. Sci. Instrum. (1995)
10.1107/S0909049500002983 / J. Synchrotron Radiat. (2000)
{'key': '2024020401045207900_r5'}
10.1016/S0168-9002(01)00446-6 / Nucl. Instrum. Methods Phys. Res. A (2001)
10.1016/0368-2048(90)85063-F / J. Electron Spectrosc. Relat. Phenom. (1990)
{'key': '2024020401045207900_r8'}
10.1063/1.1361065 / J. Appl. Phys. (2001)
{'key': '2024020401045207900_r10'}
10.1016/S0022-3093(02)00964-X / J. Non-Cryst. Solids (2002)

Dates

Type	When
Created	22 years ago (July 31, 2003, 11:45 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:04 p.m.)
Indexed	3 weeks, 4 days ago (July 28, 2025, 5:22 p.m.)
Issued	22 years ago (Aug. 4, 2003)
Published	22 years ago (Aug. 4, 2003)
Published Print	22 years ago (Aug. 4, 2003)

Funders 0

None

BibTeX

@article{Kobayashi_2003, title={High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1595714}, DOI={10.1063/1.1595714}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kobayashi, K. and Yabashi, M. and Takata, Y. and Tokushima, T. and Shin, S. and Tamasaku, K. and Miwa, D. and Ishikawa, T. and Nohira, H. and Hattori, T. and Sugita, Y. and Nakatsuka, O. and Sakai, A. and Zaima, S.}, year={2003}, month=aug, pages={1005–1007} }

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