DOI: 10.1063/1.1592306. Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and <i>c</i>-plane sapphire

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

10.1063/1.1592306

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The stress states in unintentionally doped GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire, and their effects on optical properties of GaN films were investigated by means of room-temperature confocal micro-Raman scattering and photoluminescence techniques. Relatively large tensile stress exists in GaN epilayers grown on Si and 6H-SiC while a small compressive stress appears in the film grown on sapphire. The latter indicates effective strain relaxation in the GaN buffer layer inserted in the GaN/sapphire sample, while the 50-nm-thick AlN buffer adopted in the GaN/Si sample remains highly strained. The analysis shows that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films. Finally, a linear coefficient of 21.1±3.2 meV/GPa characterizing the relationship between the luminescent bandgap and the biaxial stress of the GaN films is obtained.

Bibliography

Zhao, D. G., Xu, S. J., Xie, M. H., Tong, S. Y., & Yang, H. (2003). Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire. Applied Physics Letters, 83(4), 677â679.

Authors 5

D. G. Zhao (first)
S. J. Xu (additional)
M. H. Xie (additional)
S. Y. Tong (additional)
Hui Yang (additional)

References 26 Referenced 391

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Dates

Type	When
Created	22 years, 1 month ago (July 24, 2003, 6:30 p.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 8:02 p.m.)
Indexed	9 hours, 6 minutes ago (Sept. 4, 2025, 9:25 a.m.)
Issued	22 years, 1 month ago (July 28, 2003)
Published	22 years, 1 month ago (July 28, 2003)
Published Print	22 years, 1 month ago (July 28, 2003)

Funders 0

None

BibTeX

@article{Zhao_2003, title={Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1592306}, DOI={10.1063/1.1592306}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhao, D. G. and Xu, S. J. and Xie, M. H. and Tong, S. Y. and Yang, Hui}, year={2003}, month=jul, pages={677–679} }

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