DOI: 10.1063/1.1591231. Silicon-based field-effect-transistor cantilever for surface potential mapping

Silicon-based field-effect-transistor cantilever for surface potential mapping

10.1063/1.1591231

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A silicon-based scanning probe with a field effect transistor (FET) has been developed. The FET is integrated onto an atomic force microscope cantilever with a sharpened tip. The commonly used complementary-metal–oxide–semiconductor process has been employed to construct the FET using a silicon-on-insulator wafer. The probe is used to measure a surface potential with a resolution of &lt;300 nm when determined by the edge of patterned SiO2 islands. The probe can be also used to detect local properties on semiconductor surfaces, such as isolated charge distributions on a surface or at subsurface.

Bibliography

Suh, M. S., Choi, J. H., Kuk, Y., & Jung, J. (2003). Silicon-based field-effect-transistor cantilever for surface potential mapping. Applied Physics Letters, 83(2), 386â388.

Authors 4

Moon Suhk Suh (first)
J. H. Choi (additional)
Young Kuk (additional)
J. Jung (additional)

References 8 Referenced 9

10.1109/16.974766 / IEEE Trans. Electron Devices (2002)
10.1063/1.99224 / Appl. Phys. Lett. (1988)
10.1063/1.102096 / Appl. Phys. Lett. (1989)
10.1063/1.119961 / Appl. Phys. Lett. (1997)
10.1063/1.126892 / Appl. Phys. Lett. (2000)
10.1063/1.1395516 / Appl. Phys. Lett. (2001)
10.1063/1.125761 / Appl. Phys. Lett. (2000)
10.1126/science.276.5312.579 / Science (1997)

Dates

Type	When
Created	22 years, 1 month ago (July 10, 2003, 6:28 p.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 7:56 p.m.)
Indexed	1 year, 1 month ago (July 20, 2024, 2:10 p.m.)
Issued	22 years, 1 month ago (July 14, 2003)
Published	22 years, 1 month ago (July 14, 2003)
Published Print	22 years, 1 month ago (July 14, 2003)

Funders 0

None

BibTeX

@article{Suh_2003, title={Silicon-based field-effect-transistor cantilever for surface potential mapping}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1591231}, DOI={10.1063/1.1591231}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Suh, Moon Suhk and Choi, J. H. and Kuk, Young and Jung, J.}, year={2003}, month=jul, pages={386–388} }

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