Abstract
We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ∼10 kΩ, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 μm. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ∼1 meV. We also demonstrate energy quantization resulting from the confinement in the wire.
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Dates
Type | When |
---|---|
Created | 22 years, 1 month ago (July 10, 2003, 6:28 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 7:54 p.m.) |
Indexed | 3 months ago (May 15, 2025, 6:05 a.m.) |
Issued | 22 years, 1 month ago (July 14, 2003) |
Published | 22 years, 1 month ago (July 14, 2003) |
Published Print | 22 years, 1 month ago (July 14, 2003) |
@article{De_Franceschi_2003, title={Single-electron tunneling in InP nanowires}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1590426}, DOI={10.1063/1.1590426}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={De Franceschi, S. and van Dam, J. A. and Bakkers, E. P. A. M. and Feiner, L. F. and Gurevich, L. and Kouwenhoven, L. P.}, year={2003}, month=jul, pages={344–346} }