Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

A recently introduced infrared photocarrier radiometry technique has been used to determine the temperature dependence of carrier mobility in Si wafers. In addition, its potential to determine simultaneously the carrier lifetime, diffusion coefficient, and surface recombination velocity is reported. This noncontact, nonintrusive, and all-optical technique relies on the detection of infrared radiation from harmonically excited free carriers (pure electronic diffusion-wave detection). Using a multiparameter fitting to a complete theory, the results showed that the lifetime increases with temperature, the diffusion coefficient decreases [D(T)∼T−1.5], and the temperature dependence of carrier mobility is μ(T)=(1.06±0.07)×109×T−2.49±0.01 cm2/V s.

Bibliography

Batista, J., Mandelis, A., & Shaughnessy, D. (2003). Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry. Applied Physics Letters, 82(23), 4077–4079.

Authors 3
  1. Jerias Batista (first)
  2. Andreas Mandelis (additional)
  3. Derrick Shaughnessy (additional)
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Dates
Type When
Created 22 years, 2 months ago (June 6, 2003, 2:43 p.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 7:42 p.m.)
Indexed 3 months, 2 weeks ago (May 15, 2025, 12:46 a.m.)
Issued 22 years, 2 months ago (June 9, 2003)
Published 22 years, 2 months ago (June 9, 2003)
Published Print 22 years, 2 months ago (June 9, 2003)
Funders 0

None

@article{Batista_2003, title={Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1582376}, DOI={10.1063/1.1582376}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Batista, Jerias and Mandelis, Andreas and Shaughnessy, Derrick}, year={2003}, month=jun, pages={4077–4079} }