Abstract
Well-aligned indium oxide pyramids were synthesized on a Ni-coated silicon (100) substrate by a chemical vapor deposition. Scanning electron microscopy and x-ray diffraction investigations show that these pyramids present a tetragonal morphology and single-crystalline cubic bixbyite structure. The size control of the pyramids was achieved by varying the growth temperature. Field-emission characteristics of the as-grown indium oxide pyramids were measured. The field-emission current density of the nanopyramids (average size: ∼180 nm) reached about 1 mA/cm2 at a threshold field of about 6.0 V/μm, which is comparable to that of carbon nanotubes, and can guarantee sufficient luminescence brightness in a flat panel display.
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Dates
Type | When |
---|---|
Created | 22 years, 2 months ago (June 6, 2003, 2:43 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 7:40 p.m.) |
Indexed | 5 months ago (March 19, 2025, 7:18 a.m.) |
Issued | 22 years, 2 months ago (June 9, 2003) |
Published | 22 years, 2 months ago (June 9, 2003) |
Published Print | 22 years, 2 months ago (June 9, 2003) |
@article{Jia_2003, title={Efficient field emission from single crystalline indium oxide pyramids}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1582354}, DOI={10.1063/1.1582354}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jia, Hongbo and Zhang, Ye and Chen, Xihong and Shu, Jing and Luo, Xuhui and Zhang, Zhensheng and Yu, Dapeng}, year={2003}, month=jun, pages={4146–4148} }