DOI: 10.1063/1.1581985. Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001)

Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001)

10.1063/1.1581985

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The origin of the superstructure observed in epitaxial yttrium oxide (Y2O3) layers on Si (001) is determined by electron energy loss spectroscopy (EELS). The oxygen K edge is measured both in the superstructure and a defect-free region of the Y2O3 layers and they are compared to EELS spectra obtained from bulk stoichiometric and reduced Y2O3. It is shown that as a result of the epitaxial growth, oxygen vacancies order into a superstructure creating nonstoichiometric regions in an otherwise stoichiometric Y2O3 layer. Furthermore, it is shown that oxygen deficiency introduces a change of the density of states of the lower conduction band of Y2O3.

Bibliography

Travlos, A., Boukos, N., Apostolopoulos, G., & Dimoulas, A. (2003). Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001). Applied Physics Letters, 82(23), 4053â4055.

Authors 4

A. Travlos (first)
N. Boukos (additional)
G. Apostolopoulos (additional)
A. Dimoulas (additional)

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Dates

Type	When
Created	22 years, 2 months ago (June 6, 2003, 2:43 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:41 p.m.)
Indexed	1 day, 17 hours ago (Aug. 20, 2025, 8:35 a.m.)
Issued	22 years, 2 months ago (June 9, 2003)
Published	22 years, 2 months ago (June 9, 2003)
Published Print	22 years, 2 months ago (June 9, 2003)

Funders 0

None

BibTeX

@article{Travlos_2003, title={Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001)}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1581985}, DOI={10.1063/1.1581985}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Travlos, A. and Boukos, N. and Apostolopoulos, G. and Dimoulas, A.}, year={2003}, month=jun, pages={4053–4055} }

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