DOI: 10.1063/1.1579543. Structural and electrical properties of (1−x)Bi(Ga1/4Sc3/4)O3

Structural and electrical properties of (1−x)Bi(Ga1/4Sc3/4)O3–xPbTiO3 piezoelectric ceramics

10.1063/1.1579543

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Bismuth containing crystalline solutions (1−x)Bi(Ga1/4Sc3/4)O3–xPbTiO3 (BGS–PT) have been developed using conventional ceramic technology. X-ray diffraction analysis reveals that BGS-PT has a perovskite structure, in which tetragonal to rhombohedral phase transformation appears for x=0.6. The dielectric properties were investigated at room and elevated temperatures, respectively, for different PT contents. BGS–PT for x=0.6 shows enhancement in dielectric constant K and piezoelectric constant d33 of 1180 and 124 pC/N, respectively, for the compositions investigated. The Curie temperature (Tc) of BGS–PT is in the range of 465–510 °C at least 100 °C higher than that of conventional Pb(Zr,Ti)O3 piezoelectric ceramics. The coercive field (Ec) of BGS–PT strongly depends on the PT content and can reach 75 kV/cm for x=0.8. Our results show that BGS–PT is a good low-lead high-temperature piezoelectric ceramic.

Bibliography

Cheng, J., Eitel, R., Li, N., & Cross, L. E. (2003). Structural and electrical properties of (1âx)Bi(Ga1/4Sc3/4)O3âxPbTiO3 piezoelectric ceramics. Journal of Applied Physics, 94(1), 605â609.

Authors 4

Jinrong Cheng (first)
Richard Eitel (additional)
Nan Li (additional)
L. E. Cross (additional)

References 8 Referenced 62

{'key': '2024020703183274300_r1', 'first-page': '2651', 'volume': '2', 'year': '1961', 'journal-title': 'Sov. Phys. Solid State'} / Sov. Phys. Solid State (1961)
10.1063/1.1732613 / J. Chem. Phys. (1962)
10.1111/j.1151-2916.1997.tb03219.x / J. Am. Ceram. Soc. (1997)
10.1063/1.1435415 / J. Appl. Phys. (2002)
10.1143/JJAP.40.5999 / Jpn. J. Appl. Phys., Part 1 (2001)
10.1143/JJAP.41.2099 / Jpn. J. Appl. Phys., Part 1 (2002)
{'key': '2024020703183274300_r7'}
10.1016/S0167-577X(02)01143-6 / Mater. Lett. (2003)

Dates

Type	When
Created	22 years, 1 month ago (June 30, 2003, 3:59 p.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 12:43 a.m.)
Indexed	4 months, 2 weeks ago (April 7, 2025, 10:27 p.m.)
Issued	22 years, 1 month ago (July 1, 2003)
Published	22 years, 1 month ago (July 1, 2003)
Published Print	22 years, 1 month ago (July 1, 2003)

Funders 0

None

BibTeX

@article{Cheng_2003, title={Structural and electrical properties of (1−x)Bi(Ga1/4Sc3/4)O3–xPbTiO3 piezoelectric ceramics}, volume={94}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1579543}, DOI={10.1063/1.1579543}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Cheng, Jinrong and Eitel, Richard and Li, Nan and Cross, L. E.}, year={2003}, month=jul, pages={605–609} }

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