Abstract
The strain state of epitaxial La0.5Sr0.5MnO3 thin films on BaTiO3 are dynamically tuned by temperature and substrate bias. The resistivity of the La0.5Sr0.5MnO3 thin films is particularly sensitive to changes in structure. Fractional changes in magnetization and resistivity as a function of temperature reveal a direct correlation with fractional changes in the structure, as measured by out-of-plane x-ray diffraction. Fractional changes in resistivity, as large as 30%, are observed for strain induced by the structural phase transitions of the BaTiO3 substrate, and a 12% change is induced by an inverse piezoelectric effect at room temperature.
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Dates
Type | When |
---|---|
Created | 22 years, 2 months ago (May 22, 2003, 6:01 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 7:39 p.m.) |
Indexed | 1 year, 2 months ago (June 2, 2024, 4:49 p.m.) |
Issued | 22 years, 2 months ago (May 26, 2003) |
Published | 22 years, 2 months ago (May 26, 2003) |
Published Print | 22 years, 2 months ago (May 26, 2003) |
@article{Dale_2003, title={Dynamically tuning properties of epitaxial colossal magnetoresistance thin films}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1578186}, DOI={10.1063/1.1578186}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dale, Darren and Fleet, Aaron and Brock, J. D. and Suzuki, Y.}, year={2003}, month=may, pages={3725–3727} }