Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

For highly disordered n-type Al0.19Ga0.33In0.48P grown lattice matched to an undoped GaAs substrate, using far-infrared-magneto-optic generalized ellipsometry, the room-temperature free-charge-carrier parameters effective mass m*=0.12(0.01) m0, concentration N=6.7(0.2)×1017 cm−3, and mobility μ=339(15) cm2/(V s) are determined by modeling the observed magneto-optic birefringence originating from the far-infrared free-charge-carrier excitations in the Al0.19Ga0.33In0.48P layer without additional electrical measurements.

Bibliography

Hofmann, T., Schubert, M., Herzinger, C. M., & Pietzonka, I. (2003). Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P. Applied Physics Letters, 82(20), 3463–3465.

Authors 4
  1. T. Hofmann (first)
  2. M. Schubert (additional)
  3. C. M. Herzinger (additional)
  4. I. Pietzonka (additional)
References 15 Referenced 20
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Dates
Type When
Created 22 years, 3 months ago (May 15, 2003, 7:33 p.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 7:32 p.m.)
Indexed 1 year, 6 months ago (Feb. 3, 2024, 8:10 p.m.)
Issued 22 years, 3 months ago (May 19, 2003)
Published 22 years, 3 months ago (May 19, 2003)
Published Print 22 years, 3 months ago (May 19, 2003)
Funders 0

None

@article{Hofmann_2003, title={Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1578162}, DOI={10.1063/1.1578162}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hofmann, T. and Schubert, M. and Herzinger, C. M. and Pietzonka, I.}, year={2003}, month=may, pages={3463–3465} }