DOI: 10.1063/1.1573369. Curie temperature and carrier concentration gradients in epitaxy-grown Ga1−xMnxAs layers

Curie temperature and carrier concentration gradients in epitaxy-grown Ga1−xMnxAs layers

10.1063/1.1573369

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on detailed investigations of the electronic and magnetic properties of ferromagnetic Ga1−xMnxAs layers, which have been fabricated by low-temperature molecular-beam epitaxy. Superconducting quantum interference device measurements reveal a decrease of the Curie temperature from the surface to the Ga1−xMnxAs/GaAs interface. While high-resolution x-ray diffraction clearly shows a homogeneous Mn distribution, a pronounced decrease of the carrier concentration from the surface towards the Ga1−xMnxAs/GaAs interface has been found by Raman spectroscopy as well as electrochemical capacitance–voltage profiling. The gradient in Curie temperature seems to be a general feature of Ga1−xMnxAs layers grown at low temperature. Possible explanations are discussed.

Bibliography

Koeder, A., Frank, S., Schoch, W., Avrutin, V., Limmer, W., Thonke, K., Sauer, R., Waag, A., Krieger, M., Zuern, K., Ziemann, P., Brotzmann, S., & Bracht, H. (2003). Curie temperature and carrier concentration gradients in epitaxy-grown Ga1âxMnxAs layers. Applied Physics Letters, 82(19), 3278â3280.

Authors 13

A. Koeder (first)
S. Frank (additional)
W. Schoch (additional)
V. Avrutin (additional)
W. Limmer (additional)
K. Thonke (additional)
R. Sauer (additional)
A. Waag (additional)
M. Krieger (additional)
K. Zuern (additional)
P. Ziemann (additional)
S. Brotzmann (additional)
H. Bracht (additional)

References 11 Referenced 34

{'key': '2024020400325253800_r1', 'first-page': '1', 'volume': '0210426', 'year': '2002', 'journal-title': 'Condensed Matter'} / Condensed Matter (2002)
10.1126/science.287.5455.1019 / Science (Washington, DC, U.S.) (2000)
10.1063/1.1539550 / Appl. Phys. Lett. (2003)
10.1103/PhysRevB.66.205209 / Phys. Rev. B (2002)
10.1063/1.1496143 / Appl. Phys. Lett. (2002)
10.1103/PhysRevB.57.R2037 / Phys. Rev. B (1998)
10.1103/PhysRevB.65.201303 / Phys. Rev. B (2002)
10.1063/1.1398619 / Appl. Phys. Lett. (2001)
10.1063/1.1529079 / Appl. Phys. Lett. (2002)
10.1103/PhysRevB.56.13103 / Phys. Rev. B (1997)
10.1016/S0038-1098(00)00436-1 / Solid State Commun. (2001)

Dates

Type	When
Created	22 years, 3 months ago (May 8, 2003, 6:38 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:33 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 12:27 a.m.)
Issued	22 years, 3 months ago (May 12, 2003)
Published	22 years, 3 months ago (May 12, 2003)
Published Print	22 years, 3 months ago (May 12, 2003)

Funders 0

None

BibTeX

@article{Koeder_2003, title={Curie temperature and carrier concentration gradients in epitaxy-grown Ga1−xMnxAs layers}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1573369}, DOI={10.1063/1.1573369}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Koeder, A. and Frank, S. and Schoch, W. and Avrutin, V. and Limmer, W. and Thonke, K. and Sauer, R. and Waag, A. and Krieger, M. and Zuern, K. and Ziemann, P. and Brotzmann, S. and Bracht, H.}, year={2003}, month=may, pages={3278–3280} }

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