DOI: 10.1063/1.1571666. Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

10.1063/1.1571666

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The effect of low-temperature annealing on (Ga,Mn)As/GaAs/(Ga,Mn)As trilayer structures is studied. Low-temperature annealing significantly increases the ferromagnetic transition temperature TC of top (Ga,Mn)As layers, reaching as high as 160 K, whereas no apparent effect is observed on bottom (Ga,Mn)As layers. The annealing effect on Be-doped trilayers is also presented.

Bibliography

Chiba, D., Takamura, K., Matsukura, F., & Ohno, H. (2003). Effect of low-temperature annealing on (Ga,Mn)As trilayer structures. Applied Physics Letters, 82(18), 3020â3022.

Authors 4

D. Chiba (first)
K. Takamura (additional)
F. Matsukura (additional)
H. Ohno (additional)

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Dates

Type	When
Created	22 years, 3 months ago (May 1, 2003, 6:04 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:27 p.m.)
Indexed	3 weeks, 6 days ago (Aug. 2, 2025, 12:28 a.m.)
Issued	22 years, 3 months ago (May 5, 2003)
Published	22 years, 3 months ago (May 5, 2003)
Published Print	22 years, 3 months ago (May 5, 2003)

Funders 0

None

BibTeX

@article{Chiba_2003, title={Effect of low-temperature annealing on (Ga,Mn)As trilayer structures}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1571666}, DOI={10.1063/1.1571666}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chiba, D. and Takamura, K. and Matsukura, F. and Ohno, H.}, year={2003}, month=may, pages={3020–3022} }

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