DOI: 10.1063/1.1568526. Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors

Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors

10.1063/1.1568526

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Relatively high mobilities, μ=0.2 cm2 V−1 s−1 in the accumulation mode and μ=0.17 cm2 V−1 s−1 in the depletion mode, are reported for regioregular poly(3-hexylthiophene) (RR-P3HT) in field-effect transistors (FETs). Significantly higher mobility is obtained from FETs in which the RR-P3HT film is applied by dip-coating to a thickness of only 20−40 Å. These observations suggest that structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate insulator is of paramount importance for achieving high carrier mobility. Heat treatment under nitrogen at 160 °C for 3 min increases the on/off ratio of the FET.

Bibliography

Wang, G., Swensen, J., Moses, D., & Heeger, A. J. (2003). Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors. Journal of Applied Physics, 93(10), 6137â6141.

Authors 4

Guangming Wang (first)
James Swensen (additional)
Daniel Moses (additional)
Alan J. Heeger (additional)

References 10 Referenced 365

10.1063/1.117834 / Appl. Phys. Lett. (1996)
10.1038/35065565 / Nature (London) (2001)
10.1126/science.280.5370.1741 / Science (1998)
10.1038/44359 / Nature (London) (1999)
10.1021/cm9701163 / Chem. Mater. (1997)
10.1021/la9904455 / Langmuir (2000)
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{'key': '2024020921010397000_r8', 'first-page': '4748', 'volume': '54', 'year': '1996', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1996)
10.1126/science.268.5208.270 / Science (1995)
10.1103/PhysRevB.44.8652 / Phys. Rev. (1991)

Dates

Type	When
Created	22 years, 3 months ago (May 15, 2003, 7:33 p.m.)
Deposited	1 year, 6 months ago (Feb. 9, 2024, 5:53 p.m.)
Indexed	53 minutes ago (Aug. 28, 2025, 8:28 a.m.)
Issued	22 years, 3 months ago (May 15, 2003)
Published	22 years, 3 months ago (May 15, 2003)
Published Print	22 years, 3 months ago (May 15, 2003)

Funders 0

None

BibTeX

@article{Wang_2003, title={Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors}, volume={93}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1568526}, DOI={10.1063/1.1568526}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Wang, Guangming and Swensen, James and Moses, Daniel and Heeger, Alan J.}, year={2003}, month=may, pages={6137–6141} }

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