Abstract
Sulfur (S)-doped titanium dioxide (TiO2) was synthesized by ion implantation and subsequent thermal annealing. The S ions were implanted into the single crystals of rutile TiO2 at a fluence of 8×1015 ions/cm2. According to the results of Rutherford backscattering spectroscopy and ion channeling analysis, the irradiation damage recovered by annealing at 600 °C in air. In the annealed crystal, the S atoms occupied oxygen sites for form Ti-S bonds, as confirmed by x-ray photoelectron spectroscopy. Compared to the pure TiO2, a photocurrent was observed in the lower-energy regions for the S-doped TiO2. Based on the theoretical analyses by the first-principles band calculations using the full potential linearized augmented plane-wave methods within the generalized gradient approximation, the mixing of the S 3p states with the valence band (VB) was found to contribute to the increasing width of the VB. This leads to the band gap narrowing in the S-doped TiO2. Therefore, the photon-to-carrier conversion was induced during irradiation by visible light above 420 nm (<2.9 eV).
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Dates
Type | When |
---|---|
Created | 22 years, 4 months ago (April 17, 2003, 6:07 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 1:50 p.m.) |
Indexed | 4 months, 2 weeks ago (April 9, 2025, 11:28 a.m.) |
Issued | 22 years, 3 months ago (May 1, 2003) |
Published | 22 years, 3 months ago (May 1, 2003) |
Published Print | 22 years, 3 months ago (May 1, 2003) |
@article{Umebayashi_2003, title={Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies}, volume={93}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1565693}, DOI={10.1063/1.1565693}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Umebayashi, T. and Yamaki, T. and Yamamoto, S. and Miyashita, A. and Tanaka, S. and Sumita, T. and Asai, K.}, year={2003}, month=may, pages={5156–5160} }