DOI: 10.1063/1.1565673. Field-dependent effective temperature and variable range hopping: Application to dark dc conductivity in doped a-Si:H

Field-dependent effective temperature and variable range hopping: Application to dark dc conductivity in doped a-Si:H

10.1063/1.1565673

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Field and temperature dependencies of the dark dc hopping conductivity are calculated for an algebraic energy distribution of localized states near the Fermi level. These dependencies are shown to merge in a universal dependence on a field-dependent effective temperature Teff. An analytical expression for Teff is derived. The analytic results agree quantitatively with experimental data obtained by Nebel et al. [Phys. Rev. B 46, 6803 (1992)] for boron- and phosphorous-doped a-Si:H. Although the effective temperature does depend upon a particular choice of the density-of-states (DOS) distribution this dependence is not very strong for DOS functions that are not too steep near the Fermi level.

Bibliography

Arkhipov, V. I., Emelianova, E. V., & Adriaenssens, G. J. (2003). Field-dependent effective temperature and variable range hopping: Application to dark dc conductivity in doped a-Si:H. Journal of Applied Physics, 93(10), 6150â6153.

Authors 3

V. I. Arkhipov (first)
E. V. Emelianova (additional)
G. J. Adriaenssens (additional)

References 18 Referenced 8

10.1103/PhysRev.120.745 / Phys. Rev. (1960)
10.1016/0022-3093(72)90304-3 / J. Non-Cryst. Solids (1972)
{'key': '2024020921235770400_r3', 'first-page': '1053', 'volume': '6', 'year': '1973', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1973)
{'key': '2024020921235770400_r3a', 'first-page': '1964', 'volume': '6', 'year': '1973', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1973)
10.1016/0022-3093(68)90002-1 / J. Non-Cryst. Solids (1968)
{'key': '2024020921235770400_r5', 'first-page': '2521', 'volume': '1', 'year': '1989', 'journal-title': 'J. Phys.: Condens. Matter'} / J. Phys.: Condens. Matter (1989)
{'key': '2024020921235770400_r6', 'first-page': '7909', 'volume': '8', 'year': '1996', 'journal-title': 'J. Phys.: Condens. Matter'} / J. Phys.: Condens. Matter (1996)
10.1103/PhysRevB.46.13100 / Phys. Rev. B (1992)
{'key': '2024020921235770400_r8', 'first-page': '437', 'volume': '166', 'year': '1993', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1993)
10.1103/PhysRevB.51.16705 / Phys. Rev. B (1995)
10.1080/14786437208226975 / Philos. Mag. (1972)
10.1016/0301-0104(90)80059-7 / Chem. Phys. (1990)
10.1103/PhysRevB.46.6789 / Phys. Rev. B (1992)
{'key': '2024020921235770400_r13'}
10.1088/0022-3719/8/4/003 / J. Phys. C (1975)
{'key': '2024020921235770400_r15', 'first-page': '657', 'volume': '65', 'year': '1992', 'journal-title': 'Philos. Mag. B'} / Philos. Mag. B (1992)
10.1103/PhysRevLett.77.542 / Phys. Rev. Lett. (1996)
{'key': '2024020921235770400_r17', 'first-page': '884', 'volume': '266', 'year': '2000', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (2000)

Dates

Type	When
Created	22 years, 3 months ago (May 15, 2003, 7:33 p.m.)
Deposited	1 year, 6 months ago (Feb. 9, 2024, 6:10 p.m.)
Indexed	1 year, 6 months ago (Feb. 9, 2024, 6:40 p.m.)
Issued	22 years, 3 months ago (May 15, 2003)
Published	22 years, 3 months ago (May 15, 2003)
Published Print	22 years, 3 months ago (May 15, 2003)

Funders 0

None

BibTeX

@article{Arkhipov_2003, title={Field-dependent effective temperature and variable range hopping: Application to dark dc conductivity in doped a-Si:H}, volume={93}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1565673}, DOI={10.1063/1.1565673}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Arkhipov, V. I. and Emelianova, E. V. and Adriaenssens, G. J.}, year={2003}, month=may, pages={6150–6153} }

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