DOI: 10.1063/1.1562001. Two-dimensional growth of high-quality strontium titanate thin films on Si

Two-dimensional growth of high-quality strontium titanate thin films on Si

10.1063/1.1562001

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Most semiconductor materials such as Si, Ge, and GaAs are subject to oxidation when exposed to oxidants. This results in difficulties in the heterointegration of epitaxial oxides on these semiconductors. Even though certain oxides may be thermodynamically stable when placed in contact with semiconductors, direct epitaxy of these oxides encounters kinetic difficulties due to the loss of epitaxy caused by the formation of an amorphous oxide at the interface. In this article, we address some important issues on the heteroepitaxy of oxides on semiconductors and show a stepped growth method that utilizes the kinetic characteristics of the growth process to suppress the oxidation of the substrate surface and thereby achieve oxide films with a high degree of crystallinity. The epitaxy of high-quality SrTiO3 (STO) thin films directly on Si was achieved. The chemical and structural properties of the STO/Si interface were evaluated in situ using reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, and scanning tunneling microscopy, and ex situ using transmission electron microscopy and electron energy loss spectroscopy.

Bibliography

Li, H., Hu, X., Wei, Y., Yu, Z., Zhang, X., Droopad, R., Demkov, A. A., Edwards, J., Moore, K., Ooms, W., Kulik, J., & Fejes, P. (2003). Two-dimensional growth of high-quality strontium titanate thin films on Si. Journal of Applied Physics, 93(8), 4521â4525.

Authors 12

H. Li (first)
X. Hu (additional)
Y. Wei (additional)
Z. Yu (additional)
X. Zhang (additional)
R. Droopad (additional)
A. A. Demkov (additional)
J. Edwards (additional)
K. Moore (additional)
W. Ooms (additional)
J. Kulik (additional)
P. Fejes (additional)

References 19 Referenced 147

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Dates

Type	When
Created	22 years, 5 months ago (April 3, 2003, 6:04 p.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 2:58 p.m.)
Indexed	4 weeks, 2 days ago (Aug. 6, 2025, 8:46 a.m.)
Issued	22 years, 4 months ago (April 15, 2003)
Published	22 years, 4 months ago (April 15, 2003)
Published Print	22 years, 4 months ago (April 15, 2003)

Funders 0

None

BibTeX

@article{Li_2003, title={Two-dimensional growth of high-quality strontium titanate thin films on Si}, volume={93}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1562001}, DOI={10.1063/1.1562001}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Li, H. and Hu, X. and Wei, Y. and Yu, Z. and Zhang, X. and Droopad, R. and Demkov, A. A. and Edwards, J. and Moore, K. and Ooms, W. and Kulik, J. and Fejes, P.}, year={2003}, month=apr, pages={4521–4525} }

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