DOI: 10.1063/1.1561580. Magnetotransport of p-type GaMnN assisted by highly conductive precipitates

Magnetotransport of p-type GaMnN assisted by highly conductive precipitates

10.1063/1.1561580

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

GaMnN growth on GaAs (100) using a GaN single precursor via molecular beam epitaxy was undertaken. The grown layers revealed p-type conduction. It is confirmed that p-GaMnN reveals room temperature ferromagnetism with hysteresis loop having a coercivity of ∼100 Oe. The segregated phase showing a transition temperature of ∼200 K is assigned to Mn3GaN, and which enhances the conductivity of the surrounding GaMnN region. As a consequence, the GaMnN layer with segregation revealed an anomalous Hall effect at room temperature proving magnetotransport in GaMnN phase. The enhanced conductivity of GaMnN by the highly conductive second phase also revealed the importance of the role of the free carriers in the carrier-mediated ferromagnetism.

Bibliography

Kim, K. H., Lee, K. J., Kim, D. J., Kim, H. J., Ihm, Y. E., Djayaprawira, D., Takahashi, M., Kim, C. S., Kim, C. G., & Yoo, S. H. (2003). Magnetotransport of p-type GaMnN assisted by highly conductive precipitates. Applied Physics Letters, 82(11), 1775â1777.

Authors 10

K. H. Kim (first)
K. J. Lee (additional)
D. J. Kim (additional)
H. J. Kim (additional)
Y. E. Ihm (additional)
D. Djayaprawira (additional)
M. Takahashi (additional)
C. S. Kim (additional)
C. G. Kim (additional)
S. H. Yoo (additional)

References 15 Referenced 75

10.1038/45502 / Nature (London) (1999)
10.1016/S1386-9477(99)00177-0 / Physica E (Amsterdam) (2000)
10.1126/science.287.5455.1019 / Science (2000)
10.1063/1.1419231 / Appl. Phys. Lett. (2001)
{'key': '2024020400070106500_r5', 'first-page': '1358', 'volume': '237–239', 'year': '2002', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (2002)
10.1063/1.1478146 / Appl. Phys. Lett. (2002)
10.1063/1.1376659 / Appl. Phys. Lett. (2001)
10.1063/1.1397763 / Appl. Phys. Lett. (2001)
10.1063/1.1348302 / Appl. Phys. Lett. (2001)
10.1063/1.1406558 / Appl. Phys. Lett. (2001)
10.1063/1.1423406 / Appl. Phys. Lett. (2001)
10.1002/1521-3862(20020304)8:2<50::AID-CVDE50>3.0.CO;2-2 / Chem. Vap. Deposition (2002)
{'key': '2024020400070106500_r13', 'first-page': '81', 'volume': '3', 'year': '1968', 'journal-title': 'Ann. Chim.'} / Ann. Chim. (1968)
10.1016/S0921-5107(99)00057-4 / Mater. Sci. Eng., B (1999)
10.1007/BF03027015 / Metals Mater. (2002)

Dates

Type	When
Created	22 years, 5 months ago (March 13, 2003, 6:10 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:07 p.m.)
Indexed	1 year, 6 months ago (Feb. 21, 2024, 5:23 p.m.)
Issued	22 years, 5 months ago (March 17, 2003)
Published	22 years, 5 months ago (March 17, 2003)
Published Print	22 years, 5 months ago (March 17, 2003)

Funders 0

None

BibTeX

@article{Kim_2003, title={Magnetotransport of p-type GaMnN assisted by highly conductive precipitates}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1561580}, DOI={10.1063/1.1561580}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kim, K. H. and Lee, K. J. and Kim, D. J. and Kim, H. J. and Ihm, Y. E. and Djayaprawira, D. and Takahashi, M. and Kim, C. S. and Kim, C. G. and Yoo, S. H.}, year={2003}, month=mar, pages={1775–1777} }

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