Abstract
Neodymium-doped Bi4Ti3O12 (BNT) films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. Bi4Ti3O12, Bi3.25La0.75Ti3O12, and Bi3.25Nd0.75Ti3O12 films were fabricated by chemical solution deposition on Pt/TiOx/SiO2/Si substrates. Nd substitution promoted random orientation with low (00l) diffraction peaks. The 1-μm-thick Bi3.25Nd0.75Ti3O12 film annealed at 750 °C exhibited a remanent polarization of 26 μC/cm2. Typical butterfly field-induced strain loops were obtained in the BNT film capacitors. The electrically induced strain is 8.4×10−4 under the bipolar driving field of 220 kV/cm. These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics.
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Dates
Type | When |
---|---|
Created | 22 years, 5 months ago (March 13, 2003, 6:10 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 7:09 p.m.) |
Indexed | 5 months ago (March 24, 2025, 2:38 a.m.) |
Issued | 22 years, 5 months ago (March 17, 2003) |
Published | 22 years, 5 months ago (March 17, 2003) |
Published Print | 22 years, 5 months ago (March 17, 2003) |
@article{Maiwa_2003, title={Electromechanical properties of Nd-doped Bi4Ti3O12 films: A candidate for lead-free thin-film piezoelectrics}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1560864}, DOI={10.1063/1.1560864}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Maiwa, Hiroshi and Iizawa, Naoya and Togawa, Daichi and Hayashi, Takashi and Sakamoto, Wataru and Yamada, Mio and Hirano, Shin-ichi}, year={2003}, month=mar, pages={1760–1762} }