Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We present an approach to use individual In2O3 nanowire transistors as chemical sensors working at room temperature. Upon exposure to a small amount of NO2 or NH3, the nanowire transistors showed a decrease in conductance up to six or five orders of magnitude and also substantial shifts in the threshold gate voltage. These devices exhibited significantly improved chemical sensing performance compared to existing solid-state sensors in many aspects, such as the sensitivity, the selectivity, the response time, and the lowest detectable concentrations. Furthermore, the recovery time of our devices can be shortened to just 30 s by illuminating the devices with UV light in vacuum.

Bibliography

Li, C., Zhang, D., Liu, X., Han, S., Tang, T., Han, J., & Zhou, C. (2003). In 2 O 3 nanowires as chemical sensors. Applied Physics Letters, 82(10), 1613–1615.

Authors 7
  1. Chao Li (first)
  2. Daihua Zhang (additional)
  3. Xiaolei Liu (additional)
  4. Song Han (additional)
  5. Tao Tang (additional)
  6. Jie Han (additional)
  7. Chongwu Zhou (additional)
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Dates
Type When
Created 22 years, 5 months ago (March 6, 2003, 6:03 p.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 7:05 p.m.)
Indexed 1 week, 1 day ago (Aug. 19, 2025, 6:32 a.m.)
Issued 22 years, 5 months ago (March 10, 2003)
Published 22 years, 5 months ago (March 10, 2003)
Published Print 22 years, 5 months ago (March 10, 2003)
Funders 0

None

@article{Li_2003, title={In 2 O 3 nanowires as chemical sensors}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1559438}, DOI={10.1063/1.1559438}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Li, Chao and Zhang, Daihua and Liu, Xiaolei and Han, Song and Tang, Tao and Han, Jie and Zhou, Chongwu}, year={2003}, month=mar, pages={1613–1615} }