DOI: 10.1063/1.1556966. Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

10.1063/1.1556966

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Lanthanum aluminate (LaAlO3) films were deposited on Si(100) substrates by a molecular beam deposition method with an electron beam gun and annealed typically in N2 atmosphere at 800 °C for 1 min. Reflection high-energy electron diffraction observation as well as x-ray diffraction analysis showed that the crystalline quality of the LaAlO3 films was amorphous, even after annealing at 800 °C. It was also found from x-ray fluorescence measurements that the ratio of La-to-Al for LaAlO3 films was almost 1:1. The dielectric constant of LaAlO3 films was estimated to be 20–25 and the leakage current density was improved by about eight orders of magnitude in maximum after the annealing process.

Bibliography

Park, B.-E., & Ishiwara, H. (2003). Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition. Applied Physics Letters, 82(8), 1197â1199.

Authors 2

Byung-Eun Park (first)
Hiroshi Ishiwara (additional)

References 5 Referenced 125

{'key': '2024020400030150900_r1', 'first-page': '427', 'volume': '596', 'year': '2000', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (2000)
10.1109/20.133736 / IEEE Trans. Magn. (1991)
10.1147/rd.346.0916 / IBM J. Res. Dev. (1990)
10.1063/1.1380246 / Appl. Phys. Lett. (2001)
10.1107/S0365110X56002965 / Acta Crystallogr. (1956)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 25, 2003, 1:42 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 7:03 p.m.)
Indexed	1 month ago (July 24, 2025, 8:14 a.m.)
Issued	22 years, 6 months ago (Feb. 24, 2003)
Published	22 years, 6 months ago (Feb. 24, 2003)
Published Print	22 years, 6 months ago (Feb. 24, 2003)

Funders 0

None

BibTeX

@article{Park_2003, title={Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1556966}, DOI={10.1063/1.1556966}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Park, Byung-Eun and Ishiwara, Hiroshi}, year={2003}, month=feb, pages={1197–1199} }

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