Abstract
Dielectric and magnetic properties of A-site substituted YMnO3 epitaxial films were studied. Stoichiometric epitaxial YMnO3 films clearly show ferroelectric behavior in P–E and C–V measurements. The I–V property is well explained by the Pool–Frenkel-type carrier emission with p-type conduction due to the existence of Mn4+, and the activation energy is calculated to be 0.58 eV. The leakage current decreases by substituting Y for Zr and increases by Li or Mg substitution. Although YMnO3 films exhibit antiferromagnetic magnetization behavior regardless of the crystallographic orientation and the carrier concentration, Li-doped sample displays parasitic ferromagnetic behavior (weak ferromagnetism). Substituting Y for Yb enhances the ferromagnetic interaction.
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Dates
Type | When |
---|---|
Created | 22 years, 3 months ago (May 15, 2003, 7:33 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 10, 2024, 11:53 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 19, 2024, 3:24 p.m.) |
Issued | 22 years, 3 months ago (May 15, 2003) |
Published | 22 years, 3 months ago (May 15, 2003) |
Published Print | 22 years, 3 months ago (May 15, 2003) |
@article{Fujimura_2003, title={Ferromagnetic and ferroelectric behaviors of A-site substituted YMnO3-based epitaxial thin films}, volume={93}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1556165}, DOI={10.1063/1.1556165}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Fujimura, N. and Sakata, H. and Ito, D. and Yoshimura, T. and Yokota, T. and Ito, T.}, year={2003}, month=may, pages={6990–6992} }