DOI: 10.1063/1.1545152. Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

10.1063/1.1545152

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The highly conductive surface layer induced in diamond by hydrogen termination has been used to fabricate in-plane gate transistors. The conductive channel has been separated from the Ohmic gate contacts by insulating thin lines, obtained by using a combination of electron-beam lithography with surface oxidation. Oxidized lines of about 100 nm show excellent blocking properties, with leakage current of 0.3 pA/μm at 100 V and room temperature. In-plane transistor properties are reported for operation at 77 K and room temperature with good saturation characteristic and complete pinch-off.

Bibliography

Garrido, J. A., Nebel, C. E., Todt, R., RÃ¶sel, G., Amann, M.-C., Stutzmann, M., Snidero, E., & Bergonzo, P. (2003). Fabrication of in-plane gate transistors on hydrogenated diamond surfaces. Applied Physics Letters, 82(6), 988â990.

Authors 8

J. A. Garrido (first)
C. E. Nebel (additional)
R. Todt (additional)
G. Rösel (additional)
M.-C. Amann (additional)
M. Stutzmann (additional)
E. Snidero (additional)
P. Bergonzo (additional)

References 11 Referenced 39

10.1063/1.115329 / Appl. Phys. Lett. (1995)
10.1063/1.112915 / Appl. Phys. Lett. (1994)
10.1109/55.641441 / IEEE Electron Device Lett. (1997)
10.1063/1.365658 / J. Appl. Phys. (1997)
10.1063/1.1496495 / Appl. Phys. Lett. (2002)
10.1063/1.102628 / Appl. Phys. Lett. (1990)
10.1103/PhysRevLett.85.3472 / Phys. Rev. Lett. (2000)
{'key': '2024020323534476600_r8'}
10.1016/0925-9635(95)00415-7 / Diamond Relat. Mater. (1996)
10.1116/1.587887 / J. Vac. Sci. Technol. B (1995)
10.1103/PhysRevB.23.3050 / Phys. Rev. B (1981)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 10, 2003, 11:22 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 6:53 p.m.)
Indexed	1 year, 2 months ago (May 28, 2024, 8:54 p.m.)
Issued	22 years, 6 months ago (Feb. 10, 2003)
Published	22 years, 6 months ago (Feb. 10, 2003)
Published Print	22 years, 6 months ago (Feb. 10, 2003)

Funders 0

None

BibTeX

@article{Garrido_2003, title={Fabrication of in-plane gate transistors on hydrogenated diamond surfaces}, volume={82}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1545152}, DOI={10.1063/1.1545152}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Garrido, J. A. and Nebel, C. E. and Todt, R. and Rösel, G. and Amann, M.-C. and Stutzmann, M. and Snidero, E. and Bergonzo, P.}, year={2003}, month=feb, pages={988–990} }

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