DOI: 10.1063/1.1521802. Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition

Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition

10.1063/1.1521802

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Atomic layer deposition (ALD) growth of high-κ dielectric films (ZrO2 and HfO2) was performed using ZrCl4, HfCl4, and H2O as precursors. In this work, we use time of flight secondary ion mass spectrometry to investigate the chlorine distribution in ALD grown ZrO2 and HfO2 films, and its evolution during rapid thermal processes in nitrogen atmosphere. Chlorine outdiffusion is found to depend strongly upon annealing temperature and weakly upon the annealing time. While in ZrO2 chlorine concentration is significantly decreased already at 900 °C, in HfO2 it is extremely stable, even at temperatures as high as 1050 °C.

Bibliography

Ferrari, S., Scarel, G., Wiemer, C., & Fanciulli, M. (2002). Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition. Journal of Applied Physics, 92(12), 7675â7677.

Authors 4

S. Ferrari (first)
G. Scarel (additional)
C. Wiemer (additional)
M. Fanciulli (additional)

References 15 Referenced 47

10.1038/35023243 / Nature (London) (2000)
10.1116/1.591472 / J. Vac. Sci. Technol. B (2000)
10.1063/1.125779 / Appl. Phys. Lett. (2000)
10.1016/S0921-5107(96)01617-0 / Mater. Sci. Eng., B (1996)
10.1116/1.1458950 / J. Vac. Sci. Technol. A (2002)
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10.1002/(SICI)1096-9918(199709)25:10<737::AID-SIA294>3.0.CO;2-M / Surf. Interface Anal. (1997)
10.1063/1.347687 / J. Appl. Phys. (1991)
10.1103/PhysRevB.27.2019 / Phys. Rev. B (1983)
{'key': '2024020713143789400_r10'}
10.1063/1.1493657 / J. Appl. Phys. (2002)
10.1103/PhysRevB.62.R13290 / Phys. Rev. B (2000)
10.1007/s100080050202 / J. Solid State Electrochem. (2000)
10.1016/S0022-3093(02)00960-2 / J. Non-Cryst. Solids (2002)
10.1111/j.1151-2916.1997.tb03163.x / J. Am. Ceram. Soc. (1997)

Dates

Type	When
Created	22 years, 8 months ago (Dec. 2, 2002, 1:48 p.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 2:52 p.m.)
Indexed	2 months ago (June 29, 2025, 11:01 a.m.)
Issued	22 years, 8 months ago (Dec. 15, 2002)
Published	22 years, 8 months ago (Dec. 15, 2002)
Published Print	22 years, 8 months ago (Dec. 15, 2002)

Funders 0

None

BibTeX

@article{Ferrari_2002, title={Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1521802}, DOI={10.1063/1.1521802}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Ferrari, S. and Scarel, G. and Wiemer, C. and Fanciulli, M.}, year={2002}, month=dec, pages={7675–7677} }

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