DOI: 10.1063/1.1521583. Fabrication of submicron-scale SrTiO3−δ devices by an atomic force microscope

Fabrication of submicron-scale SrTiO3−δ devices by an atomic force microscope

10.1063/1.1521583

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

By applying a negative voltage to the conducting tip of an atomic force microscope, we modify on submicron-scale semiconducting oxygen deficient SrTiO3−δ thin films grown on LaAlO3 substrates. In comparison with the as-grown film, the modified regions present different electrical and structural properties, which can be exploited to realize submicrometer circuits. After a discussion on the mechanisms of the process, we report a prototype of a SrTiO3−δ-based sidegate field-effect transistor, showing a 4% modulation of channel resistivity with gate voltages up to 40 V.

Bibliography

Pellegrino, L., Pallecchi, I., MarrÃ©, D., Bellingeri, E., & Siri, A. S. (2002). Fabrication of submicron-scale SrTiO3âÎ´ devices by an atomic force microscope. Applied Physics Letters, 81(20), 3849â3851.

Authors 5

L. Pellegrino (first)
I. Pallecchi (additional)
D. Marré (additional)
E. Bellingeri (additional)
A. S. Siri (additional)

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Dates

Type	When
Created	22 years, 9 months ago (Nov. 7, 2002, 3 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 6:24 p.m.)
Indexed	1 month, 3 weeks ago (July 5, 2025, 6:45 p.m.)
Issued	22 years, 9 months ago (Nov. 11, 2002)
Published	22 years, 9 months ago (Nov. 11, 2002)
Published Print	22 years, 9 months ago (Nov. 11, 2002)

Funders 0

None

BibTeX

@article{Pellegrino_2002, title={Fabrication of submicron-scale SrTiO3−δ devices by an atomic force microscope}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1521583}, DOI={10.1063/1.1521583}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pellegrino, L. and Pallecchi, I. and Marré, D. and Bellingeri, E. and Siri, A. S.}, year={2002}, month=nov, pages={3849–3851} }

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