Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550 °C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1 μA/cm2. The emission current density from the ZnO nanowires reached 1 mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.

Bibliography

Lee, C. J., Lee, T. J., Lyu, S. C., Zhang, Y., Ruh, H., & Lee, H. J. (2002). Field emission from well-aligned zinc oxide nanowires grown at low temperature. Applied Physics Letters, 81(19), 3648–3650.

Authors 6
  1. C. J. Lee (first)
  2. T. J. Lee (additional)
  3. S. C. Lyu (additional)
  4. Y. Zhang (additional)
  5. H. Ruh (additional)
  6. H. J. Lee (additional)
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Dates
Type When
Created 22 years, 9 months ago (Oct. 31, 2002, 1:22 p.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 6:24 p.m.)
Indexed 2 months, 1 week ago (June 12, 2025, 9:29 a.m.)
Issued 22 years, 9 months ago (Nov. 4, 2002)
Published 22 years, 9 months ago (Nov. 4, 2002)
Published Print 22 years, 9 months ago (Nov. 4, 2002)
Funders 0

None

@article{Lee_2002, title={Field emission from well-aligned zinc oxide nanowires grown at low temperature}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1518810}, DOI={10.1063/1.1518810}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, C. J. and Lee, T. J. and Lyu, S. C. and Zhang, Y. and Ruh, H. and Lee, H. J.}, year={2002}, month=nov, pages={3648–3650} }