Abstract
Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550 °C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1 μA/cm2. The emission current density from the ZnO nanowires reached 1 mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.
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Dates
Type | When |
---|---|
Created | 22 years, 9 months ago (Oct. 31, 2002, 1:22 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 6:24 p.m.) |
Indexed | 2 months, 1 week ago (June 12, 2025, 9:29 a.m.) |
Issued | 22 years, 9 months ago (Nov. 4, 2002) |
Published | 22 years, 9 months ago (Nov. 4, 2002) |
Published Print | 22 years, 9 months ago (Nov. 4, 2002) |
@article{Lee_2002, title={Field emission from well-aligned zinc oxide nanowires grown at low temperature}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1518810}, DOI={10.1063/1.1518810}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, C. J. and Lee, T. J. and Lyu, S. C. and Zhang, Y. and Ruh, H. and Lee, H. J.}, year={2002}, month=nov, pages={3648–3650} }