DOI: 10.1063/1.1516235. Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices

Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices

10.1063/1.1516235

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The electroluminescence (EL) properties of Er-doped Si nanoclusters (NC) embedded in metal–oxide–semiconductor devices are investigated. Due to the presence of Si NC dispersed in the SiO2 matrix, an efficient carrier injection occurs and Er is excited, producing an intense 1.54 μm room temperature EL. The EL properties as a function of the current density, temperature, and time have been studied in detail. We have also estimated the excitation cross section for Er under electrical pumping, finding a value of ∼1×10−14 cm2. This value is two orders of magnitude higher than the effective excitation cross section of Er ions through Si NC under optical pumping. In fact, quantum efficiencies of ∼1% are obtained at room temperature in these devices.

Bibliography

Iacona, F., Pacifici, D., Irrera, A., Miritello, M., FranzÃ², G., Priolo, F., Sanfilippo, D., Di Stefano, G., & Fallica, P. G. (2002). Electroluminescence at 1.54 Î¼m in Er-doped Si nanocluster-based devices. Applied Physics Letters, 81(17), 3242â3244.

Authors 9

F. Iacona (first)
D. Pacifici (additional)
A. Irrera (additional)
M. Miritello (additional)
G. Franzò (additional)
F. Priolo (additional)
D. Sanfilippo (additional)
G. Di Stefano (additional)
P. G. Fallica (additional)

References 17 Referenced 156

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Dates

Type	When
Created	22 years, 10 months ago (Oct. 17, 2002, 7:19 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 6:18 p.m.)
Indexed	4 months ago (April 20, 2025, 12:30 a.m.)
Issued	22 years, 10 months ago (Oct. 21, 2002)
Published	22 years, 10 months ago (Oct. 21, 2002)
Published Print	22 years, 10 months ago (Oct. 21, 2002)

Funders 0

None

BibTeX

@article{Iacona_2002, title={Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1516235}, DOI={10.1063/1.1516235}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Iacona, F. and Pacifici, D. and Irrera, A. and Miritello, M. and Franzò, G. and Priolo, F. and Sanfilippo, D. and Di Stefano, G. and Fallica, P. G.}, year={2002}, month=oct, pages={3242–3244} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        20
      ]
    ],
    "date-time": "2025-04-20T04:30:05Z",
    "timestamp": 1745123405500
  },
  "reference-count": 17,
  "publisher": "AIP Publishing",
  "issue": "17",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2002,
        10,
        21
      ]
    ]
  },
  "abstract": "<jats:p>The electroluminescence (EL) properties of Er-doped Si nanoclusters (NC) embedded in metal\u2013oxide\u2013semiconductor devices are investigated. Due to the presence of Si NC dispersed in the SiO2 matrix, an efficient carrier injection occurs and Er is excited, producing an intense 1.54 \u03bcm room temperature EL. The EL properties as a function of the current density, temperature, and time have been studied in detail. We have also estimated the excitation cross section for Er under electrical pumping, finding a value of \u223c1\u00d710\u221214\u2009cm2. This value is two orders of magnitude higher than the effective excitation cross section of Er ions through Si NC under optical pumping. In fact, quantum efficiencies of \u223c1% are obtained at room temperature in these devices.</jats:p>",
  "DOI": "10.1063/1.1516235",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        10,
        17
      ]
    ],
    "date-time": "2002-10-17T23:19:38Z",
    "timestamp": 1034896778000
  },
  "page": "3242-3244",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 156,
  "title": "Electroluminescence at 1.54 \u03bcm in Er-doped Si nanocluster-based devices",
  "prefix": "10.1063",
  "volume": "81",
  "author": [
    {
      "given": "F.",
      "family": "Iacona",
      "sequence": "first",
      "affiliation": [
        {
          "name": "CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121\u2009Catania, Italy"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Pacifici",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "INFM and Dipartimento di Fisica e Astronomia, Universit\u00e0 di Catania, Corso Italia 57, I-95129\u2009Catania, Italy"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Irrera",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "INFM and Dipartimento di Fisica e Astronomia, Universit\u00e0 di Catania, Corso Italia 57, I-95129\u2009Catania, Italy"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Miritello",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "INFM and Dipartimento di Fisica e Astronomia, Universit\u00e0 di Catania, Corso Italia 57, I-95129\u2009Catania, Italy"
        }
      ]
    },
    {
      "given": "G.",
      "family": "Franz\u00f2",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "INFM and Dipartimento di Fisica e Astronomia, Universit\u00e0 di Catania, Corso Italia 57, I-95129\u2009Catania, Italy"
        }
      ]
    },
    {
      "given": "F.",
      "family": "Priolo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "INFM and Dipartimento di Fisica e Astronomia, Universit\u00e0 di Catania, Corso Italia 57, I-95129\u2009Catania, Italy"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Sanfilippo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "STMicroelectronics, Stradale Primosole 50, I-95121\u2009Catania, Italy"
        }
      ]
    },
    {
      "given": "G.",
      "family": "Di Stefano",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "STMicroelectronics, Stradale Primosole 50, I-95121\u2009Catania, Italy"
        }
      ]
    },
    {
      "given": "P. G.",
      "family": "Fallica",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "STMicroelectronics, Stradale Primosole 50, I-95121\u2009Catania, Italy"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020323184116500_r1",
      "doi-asserted-by": "crossref",
      "first-page": "4883",
      "DOI": "10.1103/PhysRevB.48.4883",
      "volume": "48",
      "year": "1993",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020323184116500_r2",
      "doi-asserted-by": "crossref",
      "first-page": "2033",
      "DOI": "10.1063/1.116870",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020323184116500_r3",
      "doi-asserted-by": "crossref",
      "first-page": "440",
      "DOI": "10.1038/35044012",
      "volume": "408",
      "year": "2000",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2024020323184116500_r4",
      "doi-asserted-by": "crossref",
      "first-page": "6128",
      "DOI": "10.1063/1.371663",
      "volume": "86",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020323184116500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1295",
      "DOI": "10.1063/1.372013",
      "volume": "87",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020323184116500_r6",
      "doi-asserted-by": "crossref",
      "first-page": "2235",
      "DOI": "10.1063/1.111655",
      "volume": "64",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020323184116500_r7",
      "first-page": "L319",
      "volume": "6",
      "year": "1994",
      "journal-title": "J. Phys.: Condens. Matter"
    },
    {
      "key": "2024020323184116500_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1198",
      "DOI": "10.1063/1.119624",
      "volume": "71",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020323184116500_r9",
      "doi-asserted-by": "crossref",
      "first-page": "3",
      "DOI": "10.1007/s003390050967",
      "volume": "69",
      "year": "1999",
      "journal-title": "Appl. Phys. A: Mater. Sci. Process."
    },
    {
      "key": "2024020323184116500_r10",
      "doi-asserted-by": "crossref",
      "first-page": "264",
      "DOI": "10.1063/1.1331074",
      "volume": "89",
      "year": "2001",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020323184116500_r11",
      "doi-asserted-by": "crossref",
      "first-page": "338",
      "DOI": "10.1038/384338a0",
      "volume": "384",
      "year": "1996",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2024020323184116500_r12",
      "doi-asserted-by": "crossref",
      "first-page": "2809",
      "DOI": "10.1063/1.120143",
      "volume": "71",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020323184116500_r13",
      "doi-asserted-by": "crossref",
      "first-page": "308",
      "DOI": "10.1063/1.123007",
      "volume": "74",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020323184116500_r14",
      "first-page": "75",
      "volume": "80",
      "year": "1999",
      "journal-title": "J. Lumin."
    },
    {
      "key": "2024020323184116500_r15",
      "doi-asserted-by": "crossref",
      "first-page": "1816",
      "DOI": "10.1063/1.1290603",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020323184116500_r16",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1007/s003390101019",
      "volume": "74",
      "year": "2002",
      "journal-title": "Appl. Phys. A: Mater. Sci. Process."
    },
    {
      "key": "2024020323184116500_r17",
      "doi-asserted-by": "crossref",
      "first-page": "1866",
      "DOI": "10.1063/1.1505117",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/81/17/3242/18571450/3242_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/81/17/3242/18571450/3242_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T23:18:51Z",
    "timestamp": 1707002331000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/81/17/3242/115216/Electroluminescence-at-1-54-m-in-Er-doped-Si"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2002,
        10,
        21
      ]
    ]
  },
  "references-count": 17,
  "journal-issue": {
    "issue": "17",
    "published-print": {
      "date-parts": [
        [
          2002,
          10,
          21
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1516235",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2002,
        10,
        21
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2002,
        10,
        21
      ]
    ]
  }
}