DOI: 10.1063/1.1515952. Synchrotron x-ray scattering study of lattice relaxation in InN epitaxial layers on sapphire(0001) during dc sputter growth

Synchrotron x-ray scattering study of lattice relaxation in InN epitaxial layers on sapphire(0001) during dc sputter growth

10.1063/1.1515952

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We present the results of a high-resolution synchrotron x-ray scattering study of the lattice relaxation in an InN (0001) epitaxial layer grown on sapphire (0001) by a dc faced magnetron sputtering deposition method. X-ray powder diffraction, rocking curve, x-ray reflectivity, and atomic force microscopy surface morphology studies consistently suggest that films thinner than ∼170 Å should be highly strained, and be grown as two-dimensional epitaxial layers, in spite of the large mismatch of ∼29%. We deduced the condition for extended domain matching. The strain was relieved as the film thickness increased, while columnar seeds started to nucleate on parts of the film.

Bibliography

Lee, I. J., Kim, J. W., Hwang, Y.-H., & Kim, H.-K. (2002). Synchrotron x-ray scattering study of lattice relaxation in InN epitaxial layers on sapphire(0001) during dc sputter growth. Journal of Applied Physics, 92(10), 5814â5818.

Authors 4

Ik Jae Lee (first)
Jin Woo Kim (additional)
Yoon-Hwae Hwang (additional)
Hyung-Kook Kim (additional)

References 19 Referenced 14

10.1116/1.585897 / J. Vac. Sci. Technol. B (1992)
10.1016/S0079-6727(96)00002-X / Prog. Quantum Electron. (1996)
10.1063/1.118300 / Appl. Phys. Lett. (1997)
10.1002/zaac.19382390307 / Z. Anorg. Allg. Chem. (1938)
10.1063/1.336906 / J. Appl. Phys. (1986)
10.1143/JJAP.35.L74 / Jpn. J. Appl. Phys., Part 2 (1996)
10.1049/el:19960743 / Electron. Lett. (1996)
10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO;2-O / Phys. Status Solidi B (2002)
10.1016/0025-5408(70)90028-0 / Mater. Res. Bull. (1970)
10.1063/1.336906 / J. Appl. Phys. (1986)
10.1016/0040-6090(88)90174-5 / Thin Solid Films (1988)
10.1063/1.1489082 / Appl. Phys. Lett. (2002)
{'key': '2024021111123515600_r13', 'first-page': '77', 'volume': '198', 'year': '1994', 'journal-title': 'Physica B'} / Physica B (1994)
{'key': '2024021111123515600_r14', 'first-page': '118', 'volume': '27', 'year': '1978', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1978)
10.1103/PhysRevB.51.4441 / Phys. Rev. (1995)
{'key': '2024021111123515600_r16'}
10.1143/JJAP.37.L313 / Jpn. J. Appl. Phys., Part 2 (1998)
{'key': '2024021111123515600_r18', 'first-page': '7862', 'volume': '85', 'year': '1999', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1999)
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Dates

Type	When
Created	22 years, 9 months ago (Nov. 7, 2002, 3 p.m.)
Deposited	1 year, 6 months ago (Feb. 11, 2024, 6:13 a.m.)
Indexed	1 year, 5 months ago (April 4, 2024, 5:57 p.m.)
Issued	22 years, 9 months ago (Nov. 15, 2002)
Published	22 years, 9 months ago (Nov. 15, 2002)
Published Print	22 years, 9 months ago (Nov. 15, 2002)

Funders 0

None

BibTeX

@article{Lee_2002, title={Synchrotron x-ray scattering study of lattice relaxation in InN epitaxial layers on sapphire(0001) during dc sputter growth}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1515952}, DOI={10.1063/1.1515952}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lee, Ik Jae and Kim, Jin Woo and Hwang, Yoon-Hwae and Kim, Hyung-Kook}, year={2002}, month=nov, pages={5814–5818} }

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