DOI: 10.1063/1.1513657. Impact of the channel thickness on the performance of Schottky barrier metal–oxide

Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors

10.1063/1.1513657

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We present quantum simulations of single-gated Schottky barrier metal–oxide–semiconductor field-effect transistors on ultrathin silicon on insulator. The electrostatics of such devices is investigated and the influence of the silicon thickness on the Schottky barriers at the source and drain and, thus, the influence on the current–voltage characteristics are elaborated. We show that decreasing the channel layer thickness leads to a strong reduction of the Schottky barrier thickness and thus to an increased gate control of the drain current. The use of ultrathin channel layers improves the off- as well as the on state of such transistors and results in electrical characteristics comparable with conventional metal–oxide–semiconductor field-effect transistors.

Bibliography

Knoch, J., & Appenzeller, J. (2002). Impact of the channel thickness on the performance of Schottky barrier metalâoxideâsemiconductor field-effect transistors. Applied Physics Letters, 81(16), 3082â3084.

Authors 2

J. Knoch (first)
J. Appenzeller (additional)

References 12 Referenced 100

10.1109/16.662789 / IEEE Trans. Electron Devices (1998)
{'key': '2024020323130312600_r2', 'first-page': '57', 'volume': '2000', 'year': '2000', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.'} / Tech. Dig. - Int. Electron Devices Meet. (2000)
10.1006/spmi.2000.0954 / Superlattices Microstruct. (2000)
10.1109/16.842968 / IEEE Trans. Electron Devices (2000)
10.1063/1.123059 / Appl. Phys. Lett. (1999)
10.1063/1.123477 / Appl. Phys. Lett. (1999)
{'key': '2024020323130312600_r7'}
10.1109/TED.2002.1013278 / IEEE Trans. Electron Devices (2002)
10.1063/1.1467980 / Appl. Phys. Lett. (2002)
10.1109/16.19942 / IEEE Trans. Electron Devices (1989)
10.1002/1521-3951(199711)204:1<354::AID-PSSB354>3.0.CO;2-V / Phys. Status Solidi B (1997)
10.1103/PhysRevLett.89.126801 / Phys. Rev. Lett. (2002)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 10, 2002, 10:19 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 6:13 p.m.)
Indexed	3 months ago (June 3, 2025, 5:26 a.m.)
Issued	22 years, 10 months ago (Oct. 14, 2002)
Published	22 years, 10 months ago (Oct. 14, 2002)
Published Print	22 years, 10 months ago (Oct. 14, 2002)

Funders 0

None

BibTeX

@article{Knoch_2002, title={Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1513657}, DOI={10.1063/1.1513657}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Knoch, J. and Appenzeller, J.}, year={2002}, month=oct, pages={3082–3084} }

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