Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

We have fabricated pentacene organic thin film transistors with spin-coated polymer gate dielectric layers, including cross-linked polyvinylphenol and a polyvinylphenol-based copolymer, and obtained devices with excellent electrical characteristics, including carrier mobility as large as 3 cm2/V s, subthreshold swing as low as 1.2 V/decade, and on/off current ratio of 105. For comparison, we have also fabricated pentacene transistors using thermally grown silicon dioxide as the gate dielectric and obtained carrier mobilities as large as 1 cm2/V s and subthreshold swing as low as 0.5 V/decade.

Bibliography

Klauk, H., Halik, M., Zschieschang, U., Schmid, G., Radlik, W., & Weber, W. (2002). High-mobility polymer gate dielectric pentacene thin film transistors. Journal of Applied Physics, 92(9), 5259–5263.

Authors 6
  1. Hagen Klauk (first)
  2. Marcus Halik (additional)
  3. Ute Zschieschang (additional)
  4. Günter Schmid (additional)
  5. Wolfgang Radlik (additional)
  6. Werner Weber (additional)
References 14 Referenced 1,084
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Dates
Type When
Created 22 years, 9 months ago (Oct. 24, 2002, 9:49 a.m.)
Deposited 2 years ago (July 24, 2023, 5:46 a.m.)
Indexed 2 weeks, 4 days ago (Aug. 5, 2025, 8:35 a.m.)
Issued 22 years, 10 months ago (Oct. 21, 2002)
Published 22 years, 10 months ago (Oct. 21, 2002)
Published Online 22 years, 10 months ago (Oct. 21, 2002)
Published Print 22 years, 9 months ago (Nov. 1, 2002)
Funders 0

None

@article{Klauk_2002, title={High-mobility polymer gate dielectric pentacene thin film transistors}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1511826}, DOI={10.1063/1.1511826}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Klauk, Hagen and Halik, Marcus and Zschieschang, Ute and Schmid, Günter and Radlik, Wolfgang and Weber, Werner}, year={2002}, month=oct, pages={5259–5263} }