Abstract
We have fabricated pentacene organic thin film transistors with spin-coated polymer gate dielectric layers, including cross-linked polyvinylphenol and a polyvinylphenol-based copolymer, and obtained devices with excellent electrical characteristics, including carrier mobility as large as 3 cm2/V s, subthreshold swing as low as 1.2 V/decade, and on/off current ratio of 105. For comparison, we have also fabricated pentacene transistors using thermally grown silicon dioxide as the gate dielectric and obtained carrier mobilities as large as 1 cm2/V s and subthreshold swing as low as 0.5 V/decade.
References
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Dates
Type | When |
---|---|
Created | 22 years, 9 months ago (Oct. 24, 2002, 9:49 a.m.) |
Deposited | 2 years ago (July 24, 2023, 5:46 a.m.) |
Indexed | 2 weeks, 4 days ago (Aug. 5, 2025, 8:35 a.m.) |
Issued | 22 years, 10 months ago (Oct. 21, 2002) |
Published | 22 years, 10 months ago (Oct. 21, 2002) |
Published Online | 22 years, 10 months ago (Oct. 21, 2002) |
Published Print | 22 years, 9 months ago (Nov. 1, 2002) |
@article{Klauk_2002, title={High-mobility polymer gate dielectric pentacene thin film transistors}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1511826}, DOI={10.1063/1.1511826}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Klauk, Hagen and Halik, Marcus and Zschieschang, Ute and Schmid, Günter and Radlik, Wolfgang and Weber, Werner}, year={2002}, month=oct, pages={5259–5263} }