DOI: 10.1063/1.1502922. Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe

Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe

10.1063/1.1502922

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Gamma-ray spectroscopy is a valuable tool of science and technology. Many applications for this tool are in need of a detector technology capable of achieving excellent energy resolution and efficient detection while operating at room temperature. Detectors based on the material cadmium zinc telluride (CdZnTe) could potentially meet this need if certain material deficiencies are addressed. The coplanar-grid as well as other electron-only detection techniques are effective in overcoming some of the material problems of CdZnTe and, consequently, have led to efficient gamma-ray detectors with good energy resolution while operating at room temperature. At the present time, the performance of these detectors is limited mainly by the degree of uniformity in electron generation and transport. Despite recent progress in the growth of CdZnTe material, small variations in these properties remain a barrier to the widespread success of such detectors. Alpha-particle response characterization of CdZnTe crystals fabricated into simple planar detectors provides an effective tool to accurately study such variations. We have used a finely collimated alpha source to produce two-dimensional maps of detector response. For a number of crystals, a clear correlation has been observed between their alpha response maps and the distribution of tellurium inclusions inside the crystals. An analysis of the induced charge signals indicates that regions of enhanced electron trapping are associated with the inclusions, and that these regions extend beyond the physical size of the inclusions. Such regions introduce nonuniform electron trapping in the material that then degrades the spectroscopic performance of the material as a gamma-ray detector.

Bibliography

Amman, M., Lee, J. S., & Luke, P. N. (2002). Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe. Journal of Applied Physics, 92(6), 3198â3206.

Authors 3

Mark Amman (first)
Julie S. Lee (additional)
Paul N. Luke (additional)

References 30 Referenced 84

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Dates

Type	When
Created	22 years, 11 months ago (Aug. 30, 2002, 1:02 p.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 7:39 p.m.)
Indexed	4 months, 1 week ago (April 11, 2025, 1:10 a.m.)
Issued	22 years, 11 months ago (Sept. 15, 2002)
Published	22 years, 11 months ago (Sept. 15, 2002)
Published Print	22 years, 11 months ago (Sept. 15, 2002)

Funders 0

None

BibTeX

@article{Amman_2002, title={Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1502922}, DOI={10.1063/1.1502922}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Amman, Mark and Lee, Julie S. and Luke, Paul N.}, year={2002}, month=sep, pages={3198–3206} }

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