DOI: 10.1063/1.1502188. Metal–insulator–semiconductor electrostatics of carbon nanotubes

Metal–insulator–semiconductor electrostatics of carbon nanotubes

10.1063/1.1502188

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Carbon nanotube metal–insulator–semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal–oxide–semiconductor capacitors, the calculated C–V curves reflect the local peaks of the one-dimensional density-of-states in the nanotube. This effect provides the possibility to use C–V measurements to diagnose the electronic structures of nanotubes. Results of the electrostatic calculations can also be applied to estimate the upper-limit on-current of carbon nanotube field-effect transistors.

Bibliography

Guo, J., Goasguen, S., Lundstrom, M., & Datta, S. (2002). Metalâinsulatorâsemiconductor electrostatics of carbon nanotubes. Applied Physics Letters, 81(8), 1486â1488.

Authors 4

Jing Guo (first)
Sebastien Goasguen (additional)
Mark Lundstrom (additional)
Supriyo Datta (additional)

References 18 Referenced 104

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Dates

Type	When
Created	22 years, 11 months ago (Sept. 18, 2002, 1:44 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:55 p.m.)
Indexed	1 month, 2 weeks ago (July 3, 2025, 4:21 p.m.)
Issued	23 years ago (Aug. 19, 2002)
Published	23 years ago (Aug. 19, 2002)
Published Print	23 years ago (Aug. 19, 2002)

Funders 0

None

BibTeX

@article{Guo_2002, title={Metal–insulator–semiconductor electrostatics of carbon nanotubes}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1502188}, DOI={10.1063/1.1502188}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Guo, Jing and Goasguen, Sebastien and Lundstrom, Mark and Datta, Supriyo}, year={2002}, month=aug, pages={1486–1488} }

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