DOI: 10.1063/1.1501751. Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide

Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide

10.1063/1.1501751

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The initial stages of TiO2 growth on Si(111) under ultra-high vacuum conditions is studied using core level photoelectron spectroscopy, x-ray absorption spectroscopy, and scanning tunneling microscopy. The TiO2 film was formed by means of chemical vapor deposition of titanium(IV) isopropoxide at a sample temperature of 500 °C. The thickness and composition of the amorphous interface layer and its subsequent transition to crystalline anatase TiO2 are discussed. Three different stages are identified: In the initial stage (film thickness &lt;10 Å), the oxygen atoms are coordinated mainly to Si atoms giving rise to Ti atoms with oxidation states lower than 4+. At this stage, a small amount of carbon (0.15 ML) is observed. The next stage (&lt;25 Å) is best described as an amorphous TiSixOy compound in which the oxidation state of Ti is 4+ and the x and y values vary monotonically with the film thickness, from 2 to 0 and 4 to 2, respectively. Finally (&gt;30 Å) a stoichiometric TiO2 layer starts to form. The TiO2 phase is anatase and the layer consists of particles ∼10 nm wide.

Bibliography

Sandell, A., Anderson, M. P., Alfredsson, Y., Johansson, M. K.-J., Schnadt, J., Rensmo, H., Siegbahn, H., & Uvdal, P. (2002). Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide. Journal of Applied Physics, 92(6), 3381â3387.

Authors 8

A. Sandell (first)
M. P. Anderson (additional)
Y. Alfredsson (additional)
M. K.-J. Johansson (additional)
J. Schnadt (additional)
H. Rensmo (additional)
H. Siegbahn (additional)
P. Uvdal (additional)

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Dates

Type	When
Created	22 years, 11 months ago (Aug. 30, 2002, 1:02 p.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 7:45 p.m.)
Indexed	1 year, 1 month ago (July 11, 2024, 9:55 a.m.)
Issued	22 years, 11 months ago (Sept. 15, 2002)
Published	22 years, 11 months ago (Sept. 15, 2002)
Published Print	22 years, 11 months ago (Sept. 15, 2002)

Funders 0

None

BibTeX

@article{Sandell_2002, title={Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1501751}, DOI={10.1063/1.1501751}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sandell, A. and Anderson, M. P. and Alfredsson, Y. and Johansson, M. K.-J. and Schnadt, J. and Rensmo, H. and Siegbahn, H. and Uvdal, P.}, year={2002}, month=sep, pages={3381–3387} }

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