DOI: 10.1063/1.1495883. Current-controlled bi-stable domain configurations in Ni81Fe19 elements: An approach to magnetic memory devices

Current-controlled bi-stable domain configurations in Ni81Fe19 elements: An approach to magnetic memory devices

10.1063/1.1495883

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The discovery of current-switchable bi-stable remanent domain configurations on small ferromagnetic islands is reported. Rectangular NiFe islands with a thickness of 50 to 100 nm and lateral dimensions on the order of several microns were imaged using magnetic force microscopy after application of 10 ns current pulses through the material. The closure configuration can be set into either the 4 or 7 domain configuration by applying positive or negative current polarity at density on the order 107 A/cm2. The chirality of the closure patterns is fixed, implying that only two rather than four states are stable in these patterns. The possibility of using these configurations as a means of storing a logic state for memory applications is discussed.

Bibliography

Koo, H., Krafft, C., & Gomez, R. D. (2002). Current-controlled bi-stable domain configurations in Ni81Fe19 elements: An approach to magnetic memory devices. Applied Physics Letters, 81(5), 862â864.

Authors 3

H. Koo (first)
C. Krafft (additional)
R. D. Gomez (additional)

References 12 Referenced 49

10.1016/0304-8853(96)00062-5 / J. Magn. Magn. Mater. (1996)
10.1126/science.285.5428.687 / Science (1999)
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{'key': '2024020322445835500_r9'}
10.1063/1.125053 / Appl. Phys. Lett. (1999)
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Dates

Type	When
Created	22 years, 11 months ago (Sept. 18, 2002, 1:44 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:45 p.m.)
Indexed	1 year, 4 months ago (April 9, 2024, 10:51 p.m.)
Issued	23 years ago (July 29, 2002)
Published	23 years ago (July 29, 2002)
Published Print	23 years ago (July 29, 2002)

Funders 0

None

BibTeX

@article{Koo_2002, title={Current-controlled bi-stable domain configurations in Ni81Fe19 elements: An approach to magnetic memory devices}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1495883}, DOI={10.1063/1.1495883}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Koo, H. and Krafft, C. and Gomez, R. D.}, year={2002}, month=jul, pages={862–864} }

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