DOI: 10.1063/1.1495530. Crystallinity of In2O3(ZnO)5 films by epitaxial growth with a self-buffer-layer

Crystallinity of In2O3(ZnO)5 films by epitaxial growth with a self-buffer-layer

10.1063/1.1495530

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Naturally modulated structures, films of In2O3(ZnO)5, were epitaxially grown by rf magnetron sputtering on (0001) sapphire substrates. The crystallographic and morphological features of the films were characterized by using x-ray-diffraction and electron-diffraction patterns. The deposition of strongly c axis orientated films of In2Zn5O8 was achieved by epitaxy with a self-buffer layer (SBL). A film of In2Zn5O8 of approximately 10 nm in thickness was initially deposited as the SBL. This initial film was annealed in situ for 10–15 min, after which the bulk of the film of In2Zn5O8 was grown. Finally, well-crystallized In2O3(ZnO)5 films were obtained by annealing the resultant film at 800 °C. The electrical properties of the synthesized film are discussed in relation to the mechanism by which the modulated In2O3(ZnO)5 structure is formed.

Bibliography

Ohashi, N., Sakaguchi, I., Hishita, S., Adachi, Y., Hareda, H., & Ogino, T. (2002). Crystallinity of In2O3(ZnO)5 films by epitaxial growth with a self-buffer-layer. Journal of Applied Physics, 92(5), 2378â2384.

Authors 6

Naoki Ohashi (first)
Isao Sakaguchi (additional)
Shunichi Hishita (additional)
Yutaka Adachi (additional)
Hajme Hareda (additional)
Tsuyoshi Ogino (additional)

References 21 Referenced 30

10.1063/1.127015 / Appl. Phys. Lett. (2000)
{'key': '2024021108404152800_r2', 'first-page': '38', 'volume': '25', 'year': '2000', 'journal-title': 'MRS Bull.'} / MRS Bull. (2000)
10.1143/JJAP.38.3682 / Jpn. J. Appl. Phys., Part 1 (1999)
{'key': '2024021108404152800_r4', 'first-page': '216', 'volume': '15', 'year': '1975', 'journal-title': 'J. Solid State Chem.'} / J. Solid State Chem. (1975)
{'key': '2024021108404152800_r5', 'first-page': '399', 'volume': '150', 'year': '1998', 'journal-title': 'Solid State Commun.'} / Solid State Commun. (1998)
10.1143/JJAP.10.736 / Jpn. J. Appl. Phys. (1971)
10.1103/PhysRevB.33.3952 / Phys. Rev. B (1986)
{'key': '2024021108404152800_r8', 'first-page': '250', 'volume': '20', 'year': '2001', 'journal-title': 'Jpn. J. Appl. Phys., Part 1'} / Jpn. J. Appl. Phys., Part 1 (2001)
10.1063/1.125102 / Appl. Phys. Lett. (1999)
10.1063/1.90457 / Appl. Phys. Lett. (1978)
10.1006/jssc.1995.1198 / J. Solid State Chem. (1995)
10.1017/S0885715600010551 / Powder Diffr. (1999)
10.1093/oxfordjournals.jmicro.a023499 / J. Electron Microsc. (1997)
{'key': '2024021108404152800_r14', 'first-page': '355', 'volume': 'B55', 'year': '1999', 'journal-title': 'Acta Crystallogr., Sect. B: Struct. Sci.'} / Acta Crystallogr., Sect. B: Struct. Sci. (1999)
10.1063/1.115118 / Appl. Phys. Lett. (1995)
10.1021/cm980173b / Chem. Mater. (1998)
10.1016/S0040-6090(99)01098-6 / Thin Solid Films (2000)
10.1111/j.1151-2916.1996.tb08958.x / J. Am. Ceram. Soc. (1996)
{'key': '2024021108404152800_r19', 'first-page': '1588', 'volume': 'C47', 'year': '1991', 'journal-title': 'Acta Crystallogr., Sect. C: Cryst. Struct. Commun.'} / Acta Crystallogr., Sect. C: Cryst. Struct. Commun. (1991)
{'key': '2024021108404152800_r20', 'first-page': '169', 'volume': '155', 'year': '1999', 'journal-title': 'Key Eng. Mater.'} / Key Eng. Mater. (1999)
10.1143/JJAP.38.5028 / Jpn. J. Appl. Phys., Part 1 (1999)

Dates

Type	When
Created	22 years, 11 months ago (Sept. 18, 2002, 1:44 p.m.)
Deposited	1 year, 6 months ago (Feb. 11, 2024, 3:40 a.m.)
Indexed	1 year, 2 months ago (June 13, 2024, 5:11 p.m.)
Issued	22 years, 11 months ago (Sept. 1, 2002)
Published	22 years, 11 months ago (Sept. 1, 2002)
Published Print	22 years, 11 months ago (Sept. 1, 2002)

Funders 0

None

BibTeX

@article{Ohashi_2002, title={Crystallinity of In2O3(ZnO)5 films by epitaxial growth with a self-buffer-layer}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1495530}, DOI={10.1063/1.1495530}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Ohashi, Naoki and Sakaguchi, Isao and Hishita, Shunichi and Adachi, Yutaka and Hareda, Hajme and Ogino, Tsuyoshi}, year={2002}, month=sep, pages={2378–2384} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        6,
        13
      ]
    ],
    "date-time": "2024-06-13T21:11:46Z",
    "timestamp": 1718313106907
  },
  "reference-count": 21,
  "publisher": "AIP Publishing",
  "issue": "5",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2002,
        9,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Naturally modulated structures, films of In2O3(ZnO)5, were epitaxially grown by rf magnetron sputtering on (0001) sapphire substrates. The crystallographic and morphological features of the films were characterized by using x-ray-diffraction and electron-diffraction patterns. The deposition of strongly c axis orientated films of In2Zn5O8 was achieved by epitaxy with a self-buffer layer (SBL). A film of In2Zn5O8 of approximately 10 nm in thickness was initially deposited as the SBL. This initial film was annealed in situ for 10\u201315 min, after which the bulk of the film of In2Zn5O8 was grown. Finally, well-crystallized In2O3(ZnO)5 films were obtained by annealing the resultant film at 800\u200a\u00b0C. The electrical properties of the synthesized film are discussed in relation to the mechanism by which the modulated In2O3(ZnO)5 structure is formed.</jats:p>",
  "DOI": "10.1063/1.1495530",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        9,
        18
      ]
    ],
    "date-time": "2002-09-18T17:44:03Z",
    "timestamp": 1032371043000
  },
  "page": "2378-2384",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 30,
  "title": "Crystallinity of In2O3(ZnO)5 films by epitaxial growth with a self-buffer-layer",
  "prefix": "10.1063",
  "volume": "92",
  "author": [
    {
      "given": "Naoki",
      "family": "Ohashi",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japan"
        }
      ]
    },
    {
      "given": "Isao",
      "family": "Sakaguchi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japan"
        }
      ]
    },
    {
      "given": "Shunichi",
      "family": "Hishita",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japan"
        }
      ]
    },
    {
      "given": "Yutaka",
      "family": "Adachi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japan"
        }
      ]
    },
    {
      "given": "Hajme",
      "family": "Hareda",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japan"
        }
      ]
    },
    {
      "given": "Tsuyoshi",
      "family": "Ogino",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-kouen, Kasuga, Fukuoka 816-8580 Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024021108404152800_r1",
      "doi-asserted-by": "crossref",
      "first-page": "475",
      "DOI": "10.1063/1.127015",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024021108404152800_r2",
      "first-page": "38",
      "volume": "25",
      "year": "2000",
      "journal-title": "MRS Bull."
    },
    {
      "key": "2024021108404152800_r3",
      "doi-asserted-by": "crossref",
      "first-page": "3682",
      "DOI": "10.1143/JJAP.38.3682",
      "volume": "38",
      "year": "1999",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024021108404152800_r4",
      "first-page": "216",
      "volume": "15",
      "year": "1975",
      "journal-title": "J. Solid State Chem."
    },
    {
      "key": "2024021108404152800_r5",
      "first-page": "399",
      "volume": "150",
      "year": "1998",
      "journal-title": "Solid State Commun."
    },
    {
      "key": "2024021108404152800_r6",
      "doi-asserted-by": "crossref",
      "first-page": "736",
      "DOI": "10.1143/JJAP.10.736",
      "volume": "10",
      "year": "1971",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024021108404152800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "3952",
      "DOI": "10.1103/PhysRevB.33.3952",
      "volume": "33",
      "year": "1986",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024021108404152800_r8",
      "first-page": "250",
      "volume": "20",
      "year": "2001",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024021108404152800_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2635",
      "DOI": "10.1063/1.125102",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024021108404152800_r10",
      "doi-asserted-by": "crossref",
      "first-page": "665",
      "DOI": "10.1063/1.90457",
      "volume": "33",
      "year": "1978",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024021108404152800_r11",
      "doi-asserted-by": "crossref",
      "first-page": "170",
      "DOI": "10.1006/jssc.1995.1198",
      "volume": "116",
      "year": "1995",
      "journal-title": "J. Solid State Chem."
    },
    {
      "key": "2024021108404152800_r12",
      "doi-asserted-by": "crossref",
      "first-page": "213",
      "DOI": "10.1017/S0885715600010551",
      "volume": "14",
      "year": "1999",
      "journal-title": "Powder Diffr."
    },
    {
      "key": "2024021108404152800_r13",
      "doi-asserted-by": "crossref",
      "first-page": "119",
      "DOI": "10.1093/oxfordjournals.jmicro.a023499",
      "volume": "46",
      "year": "1997",
      "journal-title": "J. Electron Microsc."
    },
    {
      "key": "2024021108404152800_r14",
      "first-page": "355",
      "volume": "B55",
      "year": "1999",
      "journal-title": "Acta Crystallogr., Sect. B: Struct. Sci."
    },
    {
      "key": "2024021108404152800_r15",
      "doi-asserted-by": "crossref",
      "first-page": "2246",
      "DOI": "10.1063/1.115118",
      "volume": "67",
      "year": "1995",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024021108404152800_r16",
      "doi-asserted-by": "crossref",
      "first-page": "3033",
      "DOI": "10.1021/cm980173b",
      "volume": "10",
      "year": "1998",
      "journal-title": "Chem. Mater."
    },
    {
      "key": "2024021108404152800_r17",
      "doi-asserted-by": "crossref",
      "first-page": "233",
      "DOI": "10.1016/S0040-6090(99)01098-6",
      "volume": "360",
      "year": "2000",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024021108404152800_r18",
      "doi-asserted-by": "crossref",
      "first-page": "2193",
      "DOI": "10.1111/j.1151-2916.1996.tb08958.x",
      "volume": "79",
      "year": "1996",
      "journal-title": "J. Am. Ceram. Soc."
    },
    {
      "key": "2024021108404152800_r19",
      "first-page": "1588",
      "volume": "C47",
      "year": "1991",
      "journal-title": "Acta Crystallogr., Sect. C: Cryst. Struct. Commun."
    },
    {
      "key": "2024021108404152800_r20",
      "first-page": "169",
      "volume": "155",
      "year": "1999",
      "journal-title": "Key Eng. Mater."
    },
    {
      "key": "2024021108404152800_r21",
      "doi-asserted-by": "crossref",
      "first-page": "5028",
      "DOI": "10.1143/JJAP.38.5028",
      "volume": "38",
      "year": "1999",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/92/5/2378/19085104/2378_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/92/5/2378/19085104/2378_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        11
      ]
    ],
    "date-time": "2024-02-11T08:40:54Z",
    "timestamp": 1707640854000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/92/5/2378/471989/Crystallinity-of-In2O3-ZnO-5-films-by-epitaxial"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2002,
        9,
        1
      ]
    ]
  },
  "references-count": 21,
  "journal-issue": {
    "issue": "5",
    "published-print": {
      "date-parts": [
        [
          2002,
          9,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1495530",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2002,
        9,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2002,
        9,
        1
      ]
    ]
  }
}