Abstract
High-quality epitaxial films of LaCuOS, a wide-gap p-type semiconductor, are grown on yittria-stabilized-zirconia (001) or MgO (001) single-crystal substrates by a unique method. Postannealing of a bilayer film composed of an extremely thin metallic copper layer and an amorphous LaCuOS layer at 1000 °C results in an epitaxially grown LaCuOS thin film. This thin copper layer with high orientation, which likely acts as an epitaxial initiator, is essential for epitaxial growth. The resulting epitaxial films exhibit relatively intense ultraviolet emission associated with excitons at room temperature, confirming the high crystal quality of the films.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 28, 2002, 6:05 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 4:16 p.m.) |
Indexed | 2 months, 1 week ago (June 27, 2025, 5:50 a.m.) |
Issued | 23 years, 1 month ago (July 22, 2002) |
Published | 23 years, 1 month ago (July 22, 2002) |
Published Print | 23 years, 1 month ago (July 22, 2002) |
@article{Hiramatsu_2002, title={Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1494853}, DOI={10.1063/1.1494853}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hiramatsu, Hidenori and Ueda, Kazushige and Ohta, Hiromichi and Orita, Masahiro and Hirano, Masahiro and Hosono, Hideo}, year={2002}, month=jul, pages={598–600} }