Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

High-quality epitaxial films of LaCuOS, a wide-gap p-type semiconductor, are grown on yittria-stabilized-zirconia (001) or MgO (001) single-crystal substrates by a unique method. Postannealing of a bilayer film composed of an extremely thin metallic copper layer and an amorphous LaCuOS layer at 1000 °C results in an epitaxially grown LaCuOS thin film. This thin copper layer with high orientation, which likely acts as an epitaxial initiator, is essential for epitaxial growth. The resulting epitaxial films exhibit relatively intense ultraviolet emission associated with excitons at room temperature, confirming the high crystal quality of the films.

Bibliography

Hiramatsu, H., Ueda, K., Ohta, H., Orita, M., Hirano, M., & Hosono, H. (2002). Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS. Applied Physics Letters, 81(4), 598–600.

Authors 6
  1. Hidenori Hiramatsu (first)
  2. Kazushige Ueda (additional)
  3. Hiromichi Ohta (additional)
  4. Masahiro Orita (additional)
  5. Masahiro Hirano (additional)
  6. Hideo Hosono (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 28, 2002, 6:05 p.m.)
Deposited 1 year, 7 months ago (Feb. 2, 2024, 4:16 p.m.)
Indexed 2 months, 1 week ago (June 27, 2025, 5:50 a.m.)
Issued 23 years, 1 month ago (July 22, 2002)
Published 23 years, 1 month ago (July 22, 2002)
Published Print 23 years, 1 month ago (July 22, 2002)
Funders 0

None

@article{Hiramatsu_2002, title={Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1494853}, DOI={10.1063/1.1494853}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hiramatsu, Hidenori and Ueda, Kazushige and Ohta, Hiromichi and Orita, Masahiro and Hirano, Masahiro and Hosono, Hideo}, year={2002}, month=jul, pages={598–600} }