Abstract
Ceria is a transparent oxide suitable for various optical and optoelectronic devices. In this work, we tailor independently the refractive index n and fundamental gap Eg of nanocrystalline Ceria films by varying the substrate temperature or using Ar+ ion beams during growth with electron beam evaporation. Spectroscopic ellipsometry and x-ray reflectivity are employed to study n and Eg and to identify the physical parameters that affect them. We correlate n (varies from 1.65 to 2.15 in the studied films) with the film density through a universal, square law. The film composition strongly affects Eg, which varies from 2.8 to ∼2.0 eV. The optical absorption below 3 eV and the Eg shift are attributed to O-defect states and not to modifications in interband transitions.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 28, 2002, 6:05 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 5:38 p.m.) |
Indexed | 2 months, 1 week ago (June 25, 2025, 5:52 a.m.) |
Issued | 23 years, 1 month ago (July 15, 2002) |
Published | 23 years, 1 month ago (July 15, 2002) |
Published Print | 23 years, 1 month ago (July 15, 2002) |
@article{Patsalas_2002, title={Optical performance of nanocrystalline transparent ceria films}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1494458}, DOI={10.1063/1.1494458}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Patsalas, P. and Logothetidis, S. and Metaxa, C.}, year={2002}, month=jul, pages={466–468} }