DOI: 10.1063/1.1491611. Strain induced stabilization of stepped Si and Ge surfaces near (001)

Strain induced stabilization of stepped Si and Ge surfaces near (001)

10.1063/1.1491611

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on calculations of the formation energies of several [100] and [110] oriented step structures on biaxially stressed Si and Ge (001) surfaces. It is shown that a novel rebonded [100] oriented single-height step is strongly stabilized by compressive strain compared to most well-known step structures. We propose that the side walls of “hut”-shaped quantum dots observed in recent experiments on SiGe/Si films are made up of these steps. Our calculations provide an explanation for the nucleationless growth of shallow mounds, with steps along the [100] and [110] directions in low- and high-misfit films, respectively, and for the stability of the (105) facets under compressive strain.

Bibliography

Shenoy, V. B., Ciobanu, C. V., & Freund, L. B. (2002). Strain induced stabilization of stepped Si and Ge surfaces near (001). Applied Physics Letters, 81(2), 364â366.

Authors 3

V. B. Shenoy (first)
C. V. Ciobanu (additional)
L. B. Freund (additional)

References 20 Referenced 58

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10.1103/PhysRevLett.87.256101 / Phys. Rev. Lett. (2001)
10.1016/S0022-5096(02)00015-7 / J. Mech. Phys. Solids (2002)
V. B. Shenoy and L. B. Freund, A copy of this article can be found at http://arXiv.org/abs/cond-mat/0203514.
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{'key': '2024020322363569400_r6a', 'first-page': '27', 'volume': '21', 'year': '1996', 'journal-title': 'MRS Bull.'} / MRS Bull. (1996)
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{'key': '2024020322363569400_r14'}
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Dates

Type	When
Created	23 years ago (July 28, 2002, 6:05 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:36 p.m.)
Indexed	3 weeks, 4 days ago (Aug. 2, 2025, 12:24 a.m.)
Issued	23 years, 1 month ago (July 8, 2002)
Published	23 years, 1 month ago (July 8, 2002)
Published Print	23 years, 1 month ago (July 8, 2002)

Funders 0

None

BibTeX

@article{Shenoy_2002, title={Strain induced stabilization of stepped Si and Ge surfaces near (001)}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1491611}, DOI={10.1063/1.1491611}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shenoy, V. B. and Ciobanu, C. V. and Freund, L. B.}, year={2002}, month=jul, pages={364–366} }

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