DOI: 10.1063/1.1490636. Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates

Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates

10.1063/1.1490636

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

This letter reports the synthesis of indium nitride (InN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure indium. The locations of these InN nanowires were controlled by depositing gold in desired areas on the substrates. Scanning electron microscopy and transmission electron microscopy investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 80 nm, and lengths up to 5 μm. Energy dispersive x-ray spectrometry showed that the ends of the nanowires are composed primarily of Au, and the rest of the nanowires were InN with no detectable Au incorporations. The Raman spectra showed peaks at 445, 489, and 579 cm−1, which are attributed to the A1(transverse optical), E2, and A1(longitudinal optical) phonon modes of the wurtzite InN structure, respectively. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 1.85 eV.

Bibliography

Liang, C. H., Chen, L. C., Hwang, J. S., Chen, K. H., Hung, Y. T., & Chen, Y. F. (2002). Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates. Applied Physics Letters, 81(1), 22â24.

Authors 6

C. H. Liang (first)
L. C. Chen (additional)
J. S. Hwang (additional)
K. H. Chen (additional)
Y. T. Hung (additional)
Y. F. Chen (additional)

References 9 Referenced 186

10.1063/1.336906 / J. Appl. Phys. (1986)
10.1063/1.366641 / J. Appl. Phys. (1998)
{'key': '2024020322341253900_r3', 'first-page': '257', 'volume': 'ED-34', 'year': '1987', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1987)
10.1016/0927-0248(94)90122-8 / Sol. Energy Mater. Sol. Cells (1994)
10.1103/PhysRevLett.82.237 / Phys. Rev. Lett. (1999)
10.1063/1.126758 / Appl. Phys. Lett. (2000)
10.1016/S0254-0584(01)00455-2 / Mater. Chem. Phys. (2001)
10.1016/S0040-6090(01)01754-0 / Thin Solid Films (2002)
10.1049/el:19840729 / Electron. Lett. (1984)

Dates

Type	When
Created	23 years ago (July 28, 2002, 6:05 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:34 p.m.)
Indexed	1 year ago (Aug. 10, 2024, 4:30 a.m.)
Issued	23 years, 1 month ago (July 1, 2002)
Published	23 years, 1 month ago (July 1, 2002)
Published Print	23 years, 1 month ago (July 1, 2002)

Funders 0

None

BibTeX

@article{Liang_2002, title={Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1490636}, DOI={10.1063/1.1490636}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Liang, C. H. and Chen, L. C. and Hwang, J. S. and Chen, K. H. and Hung, Y. T. and Chen, Y. F.}, year={2002}, month=jul, pages={22–24} }

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