DOI: 10.1063/1.1487923. Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition

Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition

10.1063/1.1487923

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics deposited by atomic-layer deposition (ALD) were investigated. The structural characteristics and chemical state of the HfO2 films in relation to the film thickness and postannealing temperature were examined by x-ray diffraction and x-ray photoelectron spectroscopy. An interfacial layer of hafnium silicate with an amorphous structure was grown on the oxidized Si substrate at an initial growth stage. The structural characteristics of the HfO2 films are closely affected by the interfacial layer and are depended on the thickness of the films. The 45 Å thick HfO2 film with an amorphous structure was changed into a polycrystalline structure after rapid temperature annealing of 750 °C for 5 min, while thicker films were grown into a polycrystalline structure of monoclinic or tetragonal crystal structure. The silicate layer grown at the interfacial region is not stable even at 700 °C under ultrahigh vacuum condition and changes into the silicide layers.

Bibliography

Cho, M.-H., Roh, Y. S., Whang, C. N., Jeong, K., Nahm, S. W., Ko, D.-H., Lee, J. H., Lee, N. I., & Fujihara, K. (2002). Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition. Applied Physics Letters, 81(3), 472â474.

Authors 9

M.-H. Cho (first)
Y. S. Roh (additional)
C. N. Whang (additional)
K. Jeong (additional)
S. W. Nahm (additional)
D.-H. Ko (additional)
J. H. Lee (additional)
N. I. Lee (additional)
K. Fujihara (additional)

References 12 Referenced 324

10.1116/1.1331296 / J. Vac. Sci. Technol. A (2001)
10.1063/1.122191 / Appl. Phys. Lett. (1998)
10.1109/16.554800 / IEEE Trans. Electron Devices (1997)
{'key': '2024020322410352700_r4', 'first-page': '645', 'volume': '2000', 'year': '2000', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.'} / Tech. Dig. - Int. Electron Devices Meet. (2000)
10.1063/1.1363690 / Appl. Phys. Lett. (2001)
10.1063/1.125519 / Appl. Phys. Lett. (1999)
10.1109/16.772508 / IEEE Trans. Electron Devices (1999)
{'key': '2024020322410352700_r8', 'first-page': '3143', 'volume': '24', 'year': '1999', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1999)
10.1063/1.1349860 / J. Appl. Phys. (2001)
10.1063/1.125779 / Appl. Phys. Lett. (2000)
10.1063/1.126214 / Appl. Phys. Lett. (2000)
10.1063/1.371888 / J. Appl. Phys. (2000)

Dates

Type	When
Created	23 years ago (July 28, 2002, 6:05 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:41 p.m.)
Indexed	2 months, 2 weeks ago (June 7, 2025, 10:41 a.m.)
Issued	23 years, 1 month ago (July 15, 2002)
Published	23 years, 1 month ago (July 15, 2002)
Published Print	23 years, 1 month ago (July 15, 2002)

Funders 0

None

BibTeX

@article{Cho_2002, title={Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition}, volume={81}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1487923}, DOI={10.1063/1.1487923}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cho, M.-H. and Roh, Y. S. and Whang, C. N. and Jeong, K. and Nahm, S. W. and Ko, D.-H. and Lee, J. H. and Lee, N. I. and Fujihara, K.}, year={2002}, month=jul, pages={472–474} }

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