DOI: 10.1063/1.1486256. Evolution of structural order in germanium ion-implanted amorphous silicon layers

Evolution of structural order in germanium ion-implanted amorphous silicon layers

10.1063/1.1486256

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature.

Bibliography

Cheng, S. L., Lin, H. H., He, J. H., Chiang, T. F., Yu, C. H., Chen, L. J., Yang, C. K., Wu, D. Y., Chien, S. C., & Chen, W. C. (2002). Evolution of structural order in germanium ion-implanted amorphous silicon layers. Journal of Applied Physics, 92(2), 910â913.

Authors 10

S. L. Cheng (first)
H. H. Lin (additional)
J. H. He (additional)
T. F. Chiang (additional)
C. H. Yu (additional)
L. J. Chen (additional)
C. K. Yang (additional)
D. Y. Wu (additional)
S. C. Chien (additional)
W. C. Chen (additional)

References 23 Referenced 16

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Dates

Type	When
Created	23 years, 1 month ago (July 28, 2002, 6:05 p.m.)
Deposited	1 year, 6 months ago (Feb. 11, 2024, 3:13 a.m.)
Indexed	1 year, 3 months ago (May 14, 2024, 9:45 p.m.)
Issued	23 years, 1 month ago (July 15, 2002)
Published	23 years, 1 month ago (July 15, 2002)
Published Print	23 years, 1 month ago (July 15, 2002)

Funders 0

None

BibTeX

@article{Cheng_2002, title={Evolution of structural order in germanium ion-implanted amorphous silicon layers}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1486256}, DOI={10.1063/1.1486256}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Cheng, S. L. and Lin, H. H. and He, J. H. and Chiang, T. F. and Yu, C. H. and Chen, L. J. and Yang, C. K. and Wu, D. Y. and Chien, S. C. and Chen, W. C.}, year={2002}, month=jul, pages={910–913} }

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