DOI: 10.1063/1.1486036. Interface reactions in ZrO2 based gate dielectric stacks

Interface reactions in ZrO2 based gate dielectric stacks

10.1063/1.1486036

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Interface reactions in Si/SiOx(Ny)/ZrO2 and Si/SiOx(Ny)/ZrO2/poly-Si gate stacks have been studied by high-resolution transmission electron microscopy. In the case of an uncapped stack ZrSi and ZrSi2 phases form during an ultrahigh vacuum anneal at temperatures above 900 °C. Both phases show an island-type growth with an epitaxial relationship with Si (100). Gate dielectric stacks with a poly-Si cap are found to be thermally unstable at T=1000 °C, so that the reaction is initiated at the ZrO2/poly-Si interface. Here a different reaction mechanism is identified, which involves the reduction of ZrO2 and the growth of a bottom interfacial layer between ZrOx and Si. Replacement of the bottom SiO2 layer by an ultrathin Si oxinitride does not completely suppress these interfacial reactions at T⩾1000 °C. We suggest that control of the poly-Si/ZrO2 interfacial reactions may be an important factor in modifying the thermal stability of a stack. These results shed a new light on understanding the material challenges involved in the integration of ZrO2 for the next generation of complementary metal–oxide–semiconductor technologies.

Bibliography

Gribelyuk, M. A., Callegari, A., Gusev, E. P., Copel, M., & Buchanan, D. A. (2002). Interface reactions in ZrO2 based gate dielectric stacks. Journal of Applied Physics, 92(3), 1232â1237.

Authors 5

M. A. Gribelyuk (first)
A. Callegari (additional)
E. P. Gusev (additional)
M. Copel (additional)
D. A. Buchanan (additional)

References 18 Referenced 37

{'key': '2024020706150042800_r1'}
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Dates

Type	When
Created	23 years, 1 month ago (July 28, 2002, 6:05 p.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 5:35 a.m.)
Indexed	1 year, 3 months ago (June 1, 2024, 1:11 a.m.)
Issued	23 years, 1 month ago (Aug. 1, 2002)
Published	23 years, 1 month ago (Aug. 1, 2002)
Published Print	23 years, 1 month ago (Aug. 1, 2002)

Funders 0

None

BibTeX

@article{Gribelyuk_2002, title={Interface reactions in ZrO2 based gate dielectric stacks}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1486036}, DOI={10.1063/1.1486036}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Gribelyuk, M. A. and Callegari, A. and Gusev, E. P. and Copel, M. and Buchanan, D. A.}, year={2002}, month=aug, pages={1232–1237} }

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