Abstract
Defects in the band gap of CuIn1−xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 10:23 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 5:32 p.m.) |
Indexed | 1 week, 2 days ago (Aug. 21, 2025, 12:44 p.m.) |
Issued | 23 years, 2 months ago (June 17, 2002) |
Published | 23 years, 2 months ago (June 17, 2002) |
Published Print | 23 years, 2 months ago (June 17, 2002) |
@article{Heath_2002, title={Effect of Ga content on defect states in CuIn1−xGaxSe2 photovoltaic devices}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1485301}, DOI={10.1063/1.1485301}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Heath, J. T. and Cohen, J. D. and Shafarman, W. N. and Liao, D. X. and Rockett, A. A.}, year={2002}, month=jun, pages={4540–4542} }