DOI: 10.1063/1.1483379. Structural and electrical quality of the high-<i>k</i> dielectric Y2O3 on Si (001): Dependence on growth parameters

Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters

10.1063/1.1483379

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Thin films of the high-k dielectric Y2O3 are grown on Si (001) substrates by e-beam evaporation in ultrahigh vacuum (UHV), aiming at correlating structural quality with electrical behavior. Films grown at high temperature of ∼450 °C have reproducibly good epitaxial crystalline quality although they exhibit poor electrical behavior. The best electrical properties are measured in films grown at a low to intermediate temperature range around 200 °C, although these films have inferior structural quality, exhibiting texturing or polycrystallinity. A possible explanation for the observed low leakage current (∼10−6 A/cm2 at +1 V) in these films is the presence of a thick (15–20 Å) and uniform interfacial amorphous layer typically formed during growth because of the oxidation of the silicon substrate. This layer is significantly reduced in samples grown at high temperature, while it almost disappears after in situ annealing to 650 °C in UHV, producing sharp interfaces and very good, stoichiometric crystalline Y2O3 epitaxial layers.

Bibliography

Dimoulas, A., Vellianitis, G., Travlos, A., Ioannou-Sougleridis, V., & Nassiopoulou, A. G. (2002). Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters. Journal of Applied Physics, 92(1), 426â431.

Authors 5

A. Dimoulas (first)
G. Vellianitis (additional)
A. Travlos (additional)
V. Ioannou-Sougleridis (additional)
A. G. Nassiopoulou (additional)

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Dates

Type	When
Created	23 years ago (July 28, 2002, 6:05 p.m.)
Deposited	1 year, 6 months ago (Feb. 11, 2024, 12:46 a.m.)
Indexed	1 year, 2 months ago (June 19, 2024, 2:29 a.m.)
Issued	23 years, 1 month ago (July 1, 2002)
Published	23 years, 1 month ago (July 1, 2002)
Published Print	23 years, 1 month ago (July 1, 2002)

Funders 0

None

BibTeX

@article{Dimoulas_2002, title={Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters}, volume={92}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1483379}, DOI={10.1063/1.1483379}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dimoulas, A. and Vellianitis, G. and Travlos, A. and Ioannou-Sougleridis, V. and Nassiopoulou, A. G.}, year={2002}, month=jul, pages={426–431} }

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