Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.

Bibliography

Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, H., Schaff, W. J., Saito, Y., & Nanishi, Y. (2002). Unusual properties of the fundamental band gap of InN. Applied Physics Letters, 80(21), 3967–3969.

Authors 9
  1. J. Wu (first)
  2. W. Walukiewicz (additional)
  3. K. M. Yu (additional)
  4. J. W. Ager (additional)
  5. E. E. Haller (additional)
  6. Hai Lu (additional)
  7. William J. Schaff (additional)
  8. Yoshiki Saito (additional)
  9. Yasushi Nanishi (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 10:23 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 5:19 p.m.)
Indexed 3 days, 7 hours ago (Aug. 29, 2025, 6:15 a.m.)
Issued 23 years, 3 months ago (May 27, 2002)
Published 23 years, 3 months ago (May 27, 2002)
Published Print 23 years, 3 months ago (May 27, 2002)
Funders 0

None

@article{Wu_2002, title={Unusual properties of the fundamental band gap of InN}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1482786}, DOI={10.1063/1.1482786}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wu, J. and Walukiewicz, W. and Yu, K. M. and Ager, J. W. and Haller, E. E. and Lu, Hai and Schaff, William J. and Saito, Yoshiki and Nanishi, Yasushi}, year={2002}, month=may, pages={3967–3969} }