DOI: 10.1063/1.1476705. Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x

Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x

10.1063/1.1476705

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

An approach is proposed to develop recording materials for high speed phase change optical data storage. It utilizes a thin film alloy mixture between a stoichiometric GeSbTe alloy and an additive ternary telluride alloy. Selection rules for an additive alloy are suggested. For a test, (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x thin films are deposited by co-sputtering and their structural and thermal properties are studied. Ge1Sb2Te4 and Sn1Bi2Te4 are found to form a completely soluble pseudo-binary system, whose crystalline lattice parameters obey Vegard’s rule over the entire range of x (0&lt;x&lt;1). Furthermore, the alloy mixtures display an increasing tendency for crystallization with Sn1Bi2Te4 content. Dynamic tests of disk samples are made to show the effectiveness of the approach for high speed erasure.

Bibliography

Lee, T.-Y., Kim, K.-B., Cheong, B., Lee, T. S., Park, S. J., Lee, K. S., Kim, W. M., & Kim, S. G. (2002). Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1âx(Sn1Bi2Te4)x. Applied Physics Letters, 80(18), 3313â3315.

Authors 8

Tae-Yon Lee (first)
Ki-Bum Kim (additional)
Byung-ki Cheong (additional)
Taek Sung Lee (additional)
Sung Jin Park (additional)
Kyeong Seok Lee (additional)
Won Mok Kim (additional)
Soon Gwang Kim (additional)

References 14 Referenced 35

10.1063/1.359780 / J. Appl. Phys. (1995)
10.1143/JJAP.40.1598 / Jpn. J. Appl. Phys., Part 1 (2001)
10.1063/1.1348327 / J. Appl. Phys. (2001)
10.1143/JJAP.38.1625 / Jpn. J. Appl. Phys., Part 1 (1999)
10.1143/JJAP.37.2104 / Jpn. J. Appl. Phys., Part 1 (1998)
10.1143/JJAP.39.766 / Jpn. J. Appl. Phys., Part 1 (2000)
{'key': '2024020322120956800_r7'}
{'key': '2024020322120956800_r8'}
10.1364/AO.36.009296 / Appl. Opt. (1997)
10.1063/1.348620 / J. Appl. Phys. (1991)
10.1016/0022-3093(83)90069-8 / J. Non-Cryst. Solids (1983)
{'key': '2024020322120956800_r12', 'first-page': '400', 'volume': '11', 'year': '1966', 'journal-title': 'Kristallografiya'} / Kristallografiya (1966)
{'key': '2024020322120956800_r13', 'first-page': '796', 'volume': '16', 'year': '1971', 'journal-title': 'Kristallografiya'} / Kristallografiya (1971)
{'key': '2024020322120956800_r14'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 10:24 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:12 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 8:21 p.m.)
Issued	23 years, 3 months ago (May 6, 2002)
Published	23 years, 3 months ago (May 6, 2002)
Published Print	23 years, 3 months ago (May 6, 2002)

Funders 0

None

BibTeX

@article{Lee_2002, title={Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1476705}, DOI={10.1063/1.1476705}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, Tae-Yon and Kim, Ki-Bum and Cheong, Byung-ki and Lee, Taek Sung and Park, Sung Jin and Lee, Kyeong Seok and Kim, Won Mok and Kim, Soon Gwang}, year={2002}, month=may, pages={3313–3315} }

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